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Synthesis of organic bi-layers on silicon was realized by a combination of surface functionalization under ultra-high vacuum (UHV) conditions and solution-based click chemistry. The silicon (001) surface was prepared with a high degree of perfection in UHV and functionalized via chemoselective adsorption of ethinyl cyclopropyl cyclooctyne from the gas phase. A second organic layer was then coupled in acetonitrile via the copper-catalyzed alkyne azide click reaction. The samples were directly transferred from UHV via the vapour phase of the solvent into the solution of reactants and back to UHV without contact to ambient conditions. Each reaction step was monitored by means of X-ray photoelectron spectroscopy in UHV; the N 1s spectra clearly indicated the click reaction of the azide group in the two test molecules employed, i.e., methyl-subsituted benzylazide and azide substituted pyrene. In both cases, up to 50 - 60 % of the ethinyl cyclopropyl cyclooctyne molecules on the surface were reacted.
We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams for AlSb and GaSb under different growth conditions. For AlSb(001), the
We show by first-principles calculations that the electronic properties of zigzag graphene nanoribbons (Z-GNRs) adsorbed on Si(001) substrate strongly depend on ribbon width and adsorption orientation. Only narrow Z-GNRs with even rows of zigzag chai
We present sample transfer instrumentation and integrated protocols for the preparation and correlative characterization of environmentally-sensitive materials by both atom probe tomography and electron microscopy. Ultra-high vacuum cryogenic suitcas
Building on our earlier study, we examine the kinetic barriers to decomposition of alane, AlH$_3$, on the Si(001) surface, using the nudged elastic band (NEB) approach within DFT. We find that the initial decomposition to AlH with two H atoms on the
Dimer vacancy (DV) defect complexes in the Si(001)2x1 surface were investigated using high-resolution scanning tunneling microscopy and first principles calculations. We find that under low bias filled-state tunneling conditions, isolated split-off d