اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدMicroscopic theory of the polarizability of transition metal dichalcogenides excitons: Application to WSe2
437
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
In this paper we develop a fully microscopic theory of the polarizability of excitons in transition metal dichalcogenides. We apply our method to the description of the excitation $2$p dark states. These states are not observable in absorption experiments but can be excited in a pump-probe experiment. As an example we consider $2$p dark states in WSetextsubscript{2}. We find a good agreement between recent experimental measurements and our theoretical calculations.
قيم البحث
اقرأ أيضاً
The photoluminescence (PL) spectrum of transition metal dichalcogenides (TMDs) shows a multitude of emission peaks below the bright exciton line and not all of them have been explained yet. Here, we study the emission traces of phonon-assisted recomb
inations of momentum-dark excitons. To this end, we develop a microscopic theory describing simultaneous exciton, phonon and photon interaction and including consistent many-particle dephasing. We explain the drastically different PL below the bright exciton in tungsten- and molybdenum-based materials as result of different configurations of bright and dark states. In good agreement with experiments, we show that WSe$_2$ exhibits clearly visible low-temperature PL signals stemming from the phonon-assisted recombination of momentum-dark excitons.
A fully microscopic model of the doping-dependent exciton and trion line widths in the absorption spectra of monolayer transition metal dichalcogenides in the low temperature and low doping regime is explored. The approach is based on perturbation th
eory and avoids the use of phenomenological parameters. In the low-doping regime, we find that the trion line width is relatively insensitive to doping levels while the exciton line width increases monotonically with doping. On the other hand, we argue that the trion line width shows a somewhat stronger temperature dependence. The magnitudes of the line widths are likely to be masked by phonon scattering for $T geq 20$ K in encapsulated samples in the low doping regime. We discuss the breakdown of perturbation theory, which should occur at relatively low doping levels and low temperatures. Our work also paves the way towards understanding a variety of related scattering processes, including impact ionization and Auger scattering in clean 2D samples.
n this paper, we employ a fully microscopic approach to the study of interlayer excitons in layered materials. We discuss the utilization of Fowlers and Karplus method to access the dynamical polarizability of non--interacting interlayer excitons in
a $mathrm{WSe}_{2}/mathrm{WS}_{2}$--based van der Waals heterostructure. Following from the calculation of the linear polarizability, we consider Svendsens variational method to the dynamic third--order polarizability. With this variational method, we study both two--photon absorption and third--harmonic generation processes for interlayer excitons in a $mathrm{WSe}_{2}/mathrm{WS}_{2}$ hetero--bilayer, discussing the various intra--excitonic energy level transitions observed.
We theoretically investigate the chiral topological excitons emerging in the monolayer transition metal dichalcogenides, where a bulk energy gap of valley excitons is opened up by a position dependent external magnetic field. We find two emerging chi
ral topological nontrivial excitons states, which exactly connects to the bulk topological properties, i.e., Chern number =2. The dependences of the spectrum of the chiral topological excitons on the width of the magnetic field domain wall as well as the magnetic filed strength are numerically revealed. The chiral topological valley excitons are not only important to the excitonic transport due to prevention of the backscattering, but also give rise to the quantum coherent control in the optoelectronic applications.
Impurities play an important role during recombination processes in semiconductors. Their important role is sharpened in atomically-thin transition-metal dichalcogenides whose two-dimensional character renders electrons and holes highly susceptible t
o localization caused by remote charged impurities. We study a multitude of phenomena that arise from the interaction of localized electrons with excitonic complexes. Emphasis is given to the amplification of the phonon-assisted recombination of biexcitons when it is mediated by localized electrons, showing that this mechanism can explain recent photoluminescence experiments in ML-WSe$_2$. In addition, the magnetic-field dependence of this mechanism is analyzed. The results of this work point to (i) an intriguing coupling between the longitudinal-optical and homopolar phonon modes that can further elucidate various experimental results, (ii) the physics behind a series of localization-induced optical transitions in tungsten-based materials, and (iii) the importance of localization centers in facilitating the creation of biexcitons and exciton-exciton annihilation processes.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
