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تسجيل مستخدم جديدEngineering AlGaAs-on-insulator towards quantum optical applications
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Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band gap for broadband low-loss operation. However, its full potential for record-strength nonlinear interactions is only released when the semiconductor is embedded within a dielectric cladding to produce highly confining waveguides. From simulations of such, we present second and third order pair generation that could improve upon state-of-the-art quantum optical sources and make novel regimes of strong parametric photon-photon nonlinearities accessible.
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