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Self-affine morphology of random interfaces governs their functionalities across tribological, geological, (opto-)electrical and biological applications. However, the knowledge of how energy carriers or generally classical/quantum waves interact with structural irregularity is still incomplete. In this work, we study vibrational energy transport through random interfaces exhibiting different correlation functions on the two-dimensional hexagonal lattice. We show that random interfaces at the atomic scale are Cantor composites populated on geometrical fractals, thus multifractals, and calculate their quantized conductance using atomistic approaches. We obtain a universal scaling law, which contains self-similarity for mass perturbation, and exponential scaling of structural irregularity quantified by fractal dimension. The multifractal nature and Cantor-composite picture may also be extendable to charge and photon transport across random interfaces.
Statistical properties of critical wave functions at the spin quantum Hall transition are studied both numerically and analytically (via mapping onto the classical percolation). It is shown that the index $eta$ characterizing the decay of wave functi
We present an ultra-high-precision numerical study of the spectrum of multifractal exponents $Delta_q$ characterizing anomalous scaling of wave function moments $<|psi|^{2q}>$ at the quantum Hall transition. The result reads $Delta_q = 2q(1-q)[b_0 +
The statistical properties of wave functions at the critical point of the spin quantum Hall transition are studied. The main emphasis is put onto determination of the spectrum of multifractal exponents $Delta_q$ governing the scaling of moments $<|ps
The needs for efficient heat removal and superior thermal conduction in nano/micro devices have triggered tremendous studies in low-dimensional materials with high thermal conductivity. Hexagonal boron nitride (h-BN) is believed to be one of the cand
We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a