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Radio-frequency reflectometry allows for fast and sensitive electrical readout of charge and spin qubits hosted in quantum dot devices coupled to resonant circuits. Optimizing readout, however, requires frequency tuning of the resonators and impedance matching. This is difficult to achieve using conventional semiconductor or ferroelectric-based varactors in the detection circuit as their performance degrades significantly in the mK temperature range relevant for solid-state quantum devices. Here we explore a different type of material, strontium titanate, a quantum paraelectric with exceptionally large field-tunable permittivity at low temperatures. Using strontium titanate varactors we demonstrate perfect impedance matching and resonator frequency tuning at 6 mK and characterize the varactors at this temperature in terms of their capacitance tunability, dissipative losses and magnetic field sensitivity. We show that this allows us to optimize the radio-frequency readout signal-to-noise ratio of carbon nanotube quantum dot devices to achieve a charge sensitivity of 4.8 $mu$e/Hz$^{1/2}$ and capacitance sensitivity of 0.04 aF/Hz$^{1/2}$.
Unwanted fluctuations over time, in short, noise, are detrimental to device performance, especially for quantum coherent circuits. Recent efforts have demonstrated routes to utilizing magnon systems for quantum technologies, which are based on interf
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacit
Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device
Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer f
Continuing advancements in quantum information processing have caused a paradigm shift from research mainly focused on testing the reality of quantum mechanics to engineering qubit devices with numbers required for practical quantum computation. One