ﻻ يوجد ملخص باللغة العربية
CuI has been recently rediscovered as a p-type transparent conductor with a high figure of merit. Even though many metal iodides are hygroscopic, the effect of moisture on the electrical properties of CuI has not been clarified. In this work, we observe a two-fold increase in the conductivity of CuI after exposure to ambient humidity for 5 hours, followed by slight long-term degradation. Simultaneously, the work function of CuI decreases by almost 1 eV, which can explain the large spread in the previously reported work function values. The conductivity increase is partially reversible and is maximized at intermediate humidity levels. Based on the large intra-grain mobility measured by THz spectroscopy, we suggest that hydration of grain boundaries may be beneficial for the overall hole mobility.
Functional composite thin films have a wide variety of applications in flexible and/or electronic devices, telecommunications and multifunctional emerging coatings. Rapid screening of their properties is a challenging task, especially with multiple c
Combining high-throughput experiments with machine learning allows quick optimization of parameter spaces towards achieving target properties. In this study, we demonstrate that machine learning, combined with multi-labeled datasets, can additionally
The eventual exploitation of one-dimensional nanomaterials yet needs the development of scalable, high yield, homogeneous, and environmentally friendly methods able to meet the requirements for the fabrication of under design functional nanomaterials
We demonstrate that photoemission properties of GaAs photocathodes (PCs) can be altered by surface acoustic waves (SAWs) generated on the PC surface due to dynamical piezoelectric fields of SAWs. Simulations with COMSOL indicate that electron effecti
This work proposes new chemical and mechanical materials and techniques for III-V semiconductor NW/silicone membrane formation and optoelectronic device fabrication. Molecular beam epitaxy (MBE)-synthesized n-, p- and i-GaP NWs were encapsulated by i