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The origin of the 2-dimensional electron system (2DES) appearing at the (001) interface of band insulators $rm SrTiO_3$ and $rm LaAlO_3$ has been rationalized in the framework of a polar catastrophe scenario. This implies the existence of a critical thickness of polar $rm LaAlO_3$ overlayer ($4~rm u.c.$) for the appearance of the 2DES: polar catastrophe for thick $rm LaAlO_3$ overlayer is avoided either through a Zener breakdown or a stabilization of donor defects at the $rm LaAlO_3$ surface, both providing electrons to dope the substrate. The observation of a critical thickness is observed in experiments, supporting these hypotheses. Yet, there remains an open debate about which of these possible mechanisms actually occurs first. Using hybrid functional Density Functional Theory, we re-examine these mechanisms at the same level of approximation. Particularly, we clarify the role of donor defects in these heterostructures, and argue that, under usual growth conditions, electric-field driven stabilization of oxygen vacancies and hydrogen adsorbates at the LAO surface occur at a smaller LAO thickness than required for Zener breakdown.
Recent experiments have shown that transition metal oxide heterostructures such as SrTiO$_3$-based interfaces, exhibit large, gate tunable, spintronic responses. Our theoretical study showcases key factors controlling the magnitude of the conversion,
Ionic crystals terminated at oppositely charged polar surfaces are inherently unstable and expected to undergo surface reconstructions to maintain electrostatic stability. Essentially, an electric field that arises between oppositely charged atomic p
Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investiga
A number of recent studies indicate that the charge conduction of the LaAlO$_3$/SrTiO$_3$ interface at low temperature is confined to filaments which are linked to structural domain walls in the SrTiO$_3$ with drastic consequences for example for the
We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650{deg}C exhibit the highest lo