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The electronic properties of hybrid organic-inorganic semiconductor interfaces depend strongly on the alignment of the electronic carrier levels in the organic/inorganic components. In the present work, we address this energy level alignment from first principles theory for two paradigmatic organic-inorganic semiconductor interfaces, the singlet fission materials tetracene and pentacene on H/Si(111), using all-electron hybrid density functional theory. For isolated tetracene on H/Si(111), a type I-like heterojunction (lowest-energy electron and hole states on Si) is found. For isolated pentacene, the molecular and semiconductor valence band edges are degenerate. For monolayer films, we show how to construct supercell geometries with up to 1,192 atoms, which minimize the strain between the inorganic surface and an organic monolayer film. Based on these models, we predict the formation of type II heterojunctions (electron states on Si, hole-like states on the organic species) for both acenes, indicating that charge separation at the interface between the organic and inorganic components is favored. The paper discusses the steps needed to find appropriate low-energy interface geometries for weakly bonded organic molecules and films on inorganic substrates from first principles, a necessary prerequisite for any computational level alignment prediction.
We investigate the molecular acceptors 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA), 2,3,5,6-tetra uoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), and 4,5,9,10-pyrenetetraone (PYTON) on Ag(111) using densityfunctional theory. For two gr
The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray Photoemission Spec
The Pb/Si(111) thin films were simulated within the density functional theory (DFT). The well-known Perdew-Burke-Ernzerhof (PBE) version of the generalized gradient approximation (GGA) and its recent nonempirical successor Wu-Cohen (WC) issue were us
We report experimental and theoretical evidence for the formation of chiral bobbers - an interfacial topological spin texture - in FeGe films grown by molecular beam epitaxy (MBE). After establishing the presence of skyrmions in FeGe/Si(111) thin fil
We derive first- and second-order piezoelectric coefficients for the zinc-blende III-V semiconductors, {Al,Ga,In}-{N,P,As,Sb}. The results are obtained within the Heyd-Scuseria-Ernzerhof hybrid-functional approach in the framework of density function