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The classification of topological insulators predicts the existence of high-dimensional topological phases that cannot occur in real materials, as these are limited to three or fewer spatial dimensions. We use electric circuits to experimentally implement a four-dimensional (4D) topological lattice. The lattice dimensionality is established by circuit connections, and not by mapping to a lower-dimensional system. On the lattices three-dimensional surface, we observe topological surface states that are associated with a nonzero second Chern number but vanishing first Chern numbers. The 4D lattice belongs to symmetry class AI, which refers to time-reversal-invariant and spinless systems with no special spatial symmetry. Class AI is topologically trivial in one to three spatial dimensions, so 4D is the lowest possible dimension for achieving a topological insulator in this class. This work paves the way to the use of electric circuits for exploring high-dimensional topological models.
We use the bulk Hamiltonian for a three-dimensional topological insulator such as $rm Bi_2 Se_3$ to study the states which appear on its various surfaces and along the edge between two surfaces. We use both analytical methods based on the surface Ham
The Su-Schrieffer-Heeger model of polyacetylene is a paradigmatic Hamiltonian exhibiting non-trivial edge states. By using Floquet theory we study how the spectrum of this one-dimensional topological insulator is affected by a time-dependent potentia
In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated
Though the Fermi surface of surface states of a 3D topological insulator (TI) has zero magnetization, an arbitrary segment of the full Fermi surface has a unique magnetic moment consistent with the type of spin-momentum locking in hand. We propose a
From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separa