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We report the control of vertical magnetization shift (VMS) and exchange bias through spin-orbit torque (SOT) in Pt/Co/Ir25Mn75/Co heterostructure device. The exchange bias accompanying with a large relative VMS of about 30 % is observed after applying a single pulse 40 mA in perpendicular field of 2 kOe. Furthermore, the field-free SOT-induced variations of VMS and exchange bias is also observed, which would be related to the effective built-in out-of-plane field due to unequal upward and downward interfacial spin populations. The SOT-induced switched fraction of out-of-plane interfacial spins shows a linear dependence on relative VMS, indicating the number of uncompensated pinned spins are proportional to the switched interfacial spins. Our finding offers a comprehensive understanding for electrically manipulating interfacial spins of AFM materials.
Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has been realized
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt. Making use
We use micromagnetic simulation to demonstrate layer-selective detection of magnetization directions from magnetic dots having two recording layers by using a spin-torque oscillator (STO) as a read device. This method is based on ferromagnetic resona
We use time-resolved (TR) measurements based on the polar magneto-optical Kerr effect (MOKE) to study the magnetization dynamics excited by spin orbit torques in Py (Permalloy)/Pt and Ta/CoFeB bilayers. The analysis reveals that the field-like (FL) s
We report the generation and detection of spin-orbit torque ferromagnetic resonance (STFMR) in micropatterned epitaxial Fe/Pt bilayers grown by molecular beam epitaxy. The magnetic field dependent measurements at an in-plane magnetic field angle of 4