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The interplay between magneto-electricity (ME) and magneto-elasticity (MEL) is studied in the context of voltage-controlled magnetic anisotropy (VCMA). Strain plays more than a role of changing lattice constant but that of the internal electric field in the heterostructure. As a prototype, FePt/MgO(001) is visited, where the behavior of two interfaces are drastically different: one exhibits switching the other does not. Whether an external electric field ($E_{ext}$) is present or not, we found VCMA coefficient larger than 1 pJ/V$cdot$m, as a consequence of the rearrangement of $d$ orbitals with $m=pm1$ and $pm2$ in response to an external electric field. In addition, magneto-crystalline anisotropy (MA) is analyzed with strain taken into account, where non-linear feature is presented only accountable by invoking second-order MEL.
The magnetic anisotropy in MgO-capped MnPt films and its voltage control are studied using first-principles calculations. Sharp variation of the magnetic anisotropy with film thickness, especially in the Pt-terminated film, suggests that it may be wi
Magnetic skyrmions are exciting candidates for energy-efficient computing due to their non-volatility, detectability,and mobility. A recent proposal within the paradigm of reversible computing enables large-scale circuits composed ofdirectly-cascaded
The origin of large perpendicular magneto-crystalline anisotropy (PMCA) in Fe/MgO (001) is revealed by comparing Fe layers with and without the MgO. Although Fe-O $p$-$d$ hybridization is weakly present, it cannot be the main origin of the large PMCA
Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage ad
Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the condensed states,