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We have developed a method that can analyze large random grain boundary (GB) models with the accuracy of density functional theory (DFT) calculations using active learning. It is assumed that the atomic energy is represented by the linear regression of the atomic structural descriptor. The atomic energy is obtained through DFT calculations using a small cell extracted from a huge GB model, called replica DFT atomic energy. The uncertainty reduction (UR) approach in active learning is used to efficiently collect the training data for the atomic energy. In this approach, atomic energy is not required to search for candidate points; therefore, sequential DFT calculations are not required. This approach is suitable for massively parallel computers that can execute a large number of jobs simultaneously. In this study, we demonstrate the prediction of the atomic energy of a Fe random GB model containing one million atoms using the UR approach and show that the prediction error decreases more rapidly compared with random sampling. We conclude that the UR approach with replica DFT atomic energy is useful for modeling huge GBs and will be essential for modeling other structural defects.
In this work, we propose an efficient computational scheme for first-principle quantum transport simulations to evaluate the open-boundary conditions. Its partitioning differentiates from conventional methods in that the contact self-energy matrices
Grain boundaries (GBs), an important constituent of polycrystalline materials, have a wide range of manifestion and significantly affect the properties of materials. Fully understanding the effects of GBs is stalemated due to lack of complete knowled
Beyond the conventional trial-and-error method, machine learning offers a great opportunity to accelerate the discovery of functional materials, but still often suffers from difficulties such as limited materials data and unbalanced distribution of t
A theoretical study of the surface energy-loss function of freestanding Pb(111) thin films is presented, starting from the single monolayer case. The calculations are carried applying the linear response theory, with inclusion of the electron band st
We have investigated the initial growth of Fe on GaAs(110) by means of density functional theory. In contrast to the conventionally used (001)-surface the (110)-surface does not reconstruct. Therefore, a flat interface and small diffusion can be expe