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Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor

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 نشر من قبل Lin Hao
 تاريخ النشر 2019
  مجال البحث فيزياء
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As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a new positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO3/SrTiO3 superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the Neel transition. This novel magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the BCS-to-Bose-Einstein condensation crossover of ultracold-superfluids.



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