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تسجيل مستخدم جديدMeasuring the Berry phase of graphene from wavefront dislocations in Friedel oscillations
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Electronic band structures dictate the mechanical, optical and electrical properties of crystalline solids. Their experimental determination is therefore of crucial importance for technological applications. While the spectral distribution in energy bands is routinely measured by various techniques, it is more difficult to access the topological properties of band structures such as the Berry phase {gamma}. It is usually thought that measuring the Berry phase requires applying external electromagnetic forces because these allow realizing the adiabatic transport on closed trajectories along which quantum mechanical wave-functions pick up the Berry phase. In graphene, the anomalous quantum Hall effect results from the Berry phase {gamma} = {pi} picked up by massless relativistic electrons along cyclotron orbits and proves the existence of Dirac cones. Contradicting this belief, we demonstrate that the Berry phase of graphene can be measured in absence of any external magnetic field. We observe edge dislocations in the Friedel oscillations formed at hydrogen atoms chemisorbed on graphene. Following Nye and Berry in describing these topological defects as phase singularities of complex fields, we show that the number of additional wave-fronts in the dislocation is a real space measurement of the pseudo spin winding, i.e. graphenes Berry phase. Since the electronic dispersion can also be retrieved from Friedel oscillations, our study establishes the electronic density as a powerful observable to determine both the dispersion relation and topological properties of wavefunctions. This could have profound consequences for the study of the band-structure topology of relativistic and gapped phases in solids.
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Friedel oscillation is a well-known wave phenomenon, which represents the oscillatory response of electron waves to imperfection. By utilizing the pseudospin-momentum locking in gapless graphene, two recent experiments demonstrate the measurement of
the topological Berry phase by corresponding to the unique number of wavefront dislocations in Friedel oscillations. Here, we study the Friedel oscillations in gapped graphene, in which the pseudospin-momentum locking is broken. Unusually, the wavefront dislocations do occur as that in gapless graphene, which expects the immediate verification in the current experimental condition. The number of wavefront dislocations is ascribed to the invariant pseudospin winding number in gaped and gapless graphene. This study deepens the understanding of correspondence between topological quantity and wavefront dislocations in Friedel oscillations, and implies the possibility to observe the wavefront dislocations of Friedel oscillations in intrinsic gapped two-dimensional materials, e.g., transition metal dichalcogenides.
We demonstrate that dislocations in the graphene lattice give rise to electron Berry phases equivalent to quantized values {0,1/3,-1/3} in units of the flux quantum, but with an opposite sign for the two valleys. An elementary scale consideration of
a graphene Aharonov-Bohm ring equipped with valley filters on both terminals, encircling a dislocation, says that in the regime where the intervalley mean free path is large compared to the intravalley phase coherence length, such that the valley quantum numbers can be regarded as conserved on the relevant scale, the coherent valley-polarized currents sensitive to the topological phases have to traverse the device many times before both valleys contribute, and this is not possible at intermediate temperatures where the latter length becomes of order of the device size, thus leading to an apparent violation of the basic law of linear transport that magnetoconductance is even in the applied flux. We discuss this discrepancy in the Feynman path picture of dephasing, when addressing the transition from quantum to classical dissipative transport. We also investigate this device in the scattering matrix formalism, accounting for the effects of decoherence by the Buttiker dephasing voltage probe type model which conserves the valleys, where the magnetoconductance remains even in the flux, also when different decoherence times are allowed for the individual, time reversal connected, valleys.
When a gap of tunable size opens at the conic band intersections of graphene, the Berry phase does not vanish abruptly, but progressively decreases as the gap increases. The phase depends on the reciprocal-space path radius, i.e., for a doped system,
the Fermi wave vector. The phase and its observable consequences can thus be tuned continuously via gap opening --by a modulating potential induced by strain, epitaxy, or nanostructuration-- and doping adjustment.
The phase of a quantum state may not return to its original value after the systems parameters cycle around a closed path; instead, the wavefunction may acquire a measurable phase difference called the Berry phase. Berry phases typically have been ac
cessed through interference experiments. Here, we demonstrate an unusual Berry-phase-induced spectroscopic feature: a sudden and large increase in the energy of angular-momentum states in circular graphene p-n junction resonators when a small critical magnetic field is reached. This behavior results from turning on a $pi$-Berry phase associated with the topological properties of Dirac fermions in graphene. The Berry phase can be switched on and off with small magnetic field changes on the order of 10 mT, potentially enabling a variety of optoelectronic graphene device applications.
Since its discovery, Berry phase has been demonstrated to play an important role in many quantum systems. In gapped Bernal bilayer graphene, the Berry phase can be continuously tuned from zero to 2pi, which offers a unique opportunity to explore the
tunable Berry phase on the physical phenomena. Here, we report experimental observation of Berry phases-induced valley splitting and crossing in moveable bilayer graphene p-n junction resonators. In our experiment, the bilayer graphene resonators are generated by combining the electric field of scanning tunneling microscope tip with the gap of bilayer graphene. A perpendicular magnetic field changes the Berry phase of the confined bound states in the resonators from zero to 2pi continuously and leads to the Berry phase difference for the two inequivalent valleys in the bilayer graphene. As a consequence, we observe giant valley splitting and unusual valley crossing of the lowest bound states. Our results indicate that the bilayer graphene resonators can be used to manipulate the valley degree of freedom in valleytronics.
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