اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدStrain tunable single-photon source based on a quantum dot-micropillar system
269
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Scalable quantum photonic architectures demand highly efficient, high-purity single-photon sources, which can be frequency matched via external tuning. We demonstrate a single-photon source based on an InAs quantum dot embedded in a micropillar resonator, which is frequency tunable via externally-applied stress. Our platform combines the advantages of a Bragg micropillar cavity and the piezo-strain-tuning technique enabling single photon spontaneous emission enhancement via the Purcell effect and quantum dot (QD) with tunable wavelength. Our optomechanical platform has been implemented by integration of semiconductor-based QD-micropillars on a piezoelectric substrate. The fabricated device exhibits spontaneous emission enhancement with a Purcell factor of 4.4$pm$0.7 and allows for a pure triggered single-photon generation with $g^{(2)}(0)$ < 0.07 under resonant excitation. A quantum dot emission energy tuning range of 0.75 meV for 27 kV/cm applied to the piezo substrate has been achieved. Our results pave the way towards the scalable implementation of single-photon quantum photonic technologies using optoelectronic devices.
قيم البحث
اقرأ أيضاً
Most quantum communication schemes aim at the long-distance transmission of quantum information. In the quantum repeater concept, the transmission line is subdivided into shorter links interconnected by entanglement distribution via Bell-state measur
ements to overcome inherent channel losses. This concept requires on-demand single-photon sources with a high degree of multi-photon suppression and high indistinguishability within each repeater node. For a successful operation of the repeater, a spectral matching of remote quantum light sources is essential. We present a spectrally tunable single-photon source emitting in the telecom O-band with the potential to function as a building block of a quantum communication network based on optical fibers. A thin membrane of GaAs embedding InGaAs quantum dots (QDs) is attached onto a piezoelectric actuator via gold thermocompression bonding. Here the thin gold layer acts simultaneously as an electrical contact, strain transmission medium and broadband backside mirror for the QD-micromesa. The nanofabrication of the QD-micromesa is based on in-situ electron-beam lithography, which makes it possible to integrate pre-selected single QDs deterministically into the center of monolithic micromesa structures. The QD pre-selection is based on distinct single-QD properties, signal intensity and emission energy. In combination with strain-induced fine tuning this offers a robust method to achieve spectral resonance in the emission of remote QDs. We show that the spectral tuning has no detectable influence on the multi-photon suppression with $g^{(2)}(0)$ as low as 2-4% and that the emission can be stabilized to an accuracy of 4 $mu$eV using a closed-loop optical feedback.
Using background-free detection of spin-state-dependent resonance fluorescence from a single-electron charged quantum dot with an efficiency of 0:1%, we realize a single spin-photon interface where the detection of a scattered photon with 300 picosec
ond time resolution projects the quantum dot spin to a definite spin eigenstate with fidelity exceeding 99%. The bunching of resonantly scattered photons reveals information about electron spin dynamics. High-fidelity fast spin-state initialization heralded by a single photon enables the realization of quantum information processing tasks such as non-deterministic distant spin entanglement. Given that we could suppress the measurement back-action to well below the natural spin-flip rate, realization of a quantum non-demolition measurement of a single spin could be achieved by increasing the fluorescence collection efficiency by a factor exceeding 20 using a photonic nanostructure.
We report on the observation of single-photon superradiance from an exciton in a semiconductor quantum dot. The confinement by the quantum dot is strong enough for it to mimic a two-level atom, yet sufficiently weak to ensure superradiance. The elect
rostatic interaction between the electron and the hole comprising the exciton gives rise to an anharmonic spectrum, which we exploit to prepare the superradiant quantum state deterministically with a laser pulse. We observe a five-fold enhancement of the oscillator strength compared to conventional quantum dots. The enhancement is limited by the base temperature of our cryostat and may lead to oscillator strengths above 1000 from a single quantum emitter at optical frequencies.
We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal st
ate without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band kp Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian.
The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission properties
. Here, we show a compact and hybrid 2D-semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner, while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and in particular the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
