ﻻ يوجد ملخص باللغة العربية
This paper presents the possibility of using very thin Low Gain Avalanche Diodes (LGAD) ($25 - 50mu$m thick) as tracking detector at future hadron colliders, where particle fluence will be above $10^{16}; n_{eq}/cm^2$. In the present design, silicon sensors at the High-Luminosity LHC will be 100- 200 $mu$m thick, generating, before irradiation, signals of 1-2 fC. This contribution shows how very thin LGAD can provide signals of the same magnitude via the interplay of gain in the gain layer and gain in the bulk up to fluences above $10^{16}; n_{eq}/cm^2$: up to fluences of 0.1-0.3$cdot 10^{16}; n_{eq}/cm^2$, thin LGADs maintain a gain of $sim$ 5-10 while at higher fluences the increased bias voltage will trigger the onset of multiplication in the bulk, providing the same gain as previously obtained in the gain layer. Key to this idea is the possibility of a reliable, high-density LGAD design able to hold large bias voltages ($sim$ 500V).
A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter
An instrument has been developed for precision controlled exposures of electronic devices and material samples in particle beams. The instrument provides simultaneously a real time record of the profile of the beam and the fluence received. The syste
We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to their radiatio
Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolu
Thin pad detectors made from 75 $mu$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$times 10^{16}$ n/cm$^2$ to 1$times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that the active d