اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSurface currents in Hall devices
63
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
A variational approach is used in order to study the stationary states of Hall devices. Charge accumulation, electric potentials and electric currents are investigated on the basis of the Kirchhoff-Helmholtz principle of least heat dissipation. A simple expression for the state of minimum power dissipated -- that corresponds to zero transverse current and harmonic chemical potential -- is derived. It is shown that a longitudinal surface current proportional to the charge accumulation is flowing near the edges of the device. Charge accumulation and surface currents define a boundary layer over a distance of the order of the Debye-Fermi length.
قيم البحث
اقرأ أيضاً
We calculate the energy spectrum and eigenstates of a graphene sheet which contains a circular deformation. Using time-independent perturbation theory with the ratio of the height and width of the deformation as the small parameter, we find that due
to the curvature the wavefunctions for the various states acquire unique angular asymmetry. We demonstrate that the pseudo-magnetic fields induced by the curvature result in circulating probability currents. These circulating currents in turn produce local textit{real} magnetic fields $sim$ 100 $mu$T which can be measured using current technology.
We study ring shaped (Corbino) devices made of bilayer two-dimensional electron gases in the total filling factor one quantized Hall phase which is considered to be a coherent BCS-like state of interlayer excitons. Identical Josephson currents are ob
served at the two edges while only a negligible conductance between them is found. The maximum Josephson current observed at either edge can be controlled by passing a second interlayer Josephson current at the other edge. Due to the large electric resistance between the two edges, the interaction between them can only be mediated by the neutral interlayer excitonic groundstate.
We show that in the multi-terminal ballistic devices with intrinsic spin-orbit interaction connected to normal metal contacts there are no equilibrium spin currents present at any given electron energy. Obviously, this statement holds also after the
integration over all occupied states. Based on the proof of this fact, a number of scenarios involving nonequilibrium spin currents is identified and further analyzed. In particular, it is shown that an arbitrary two-terminal device cannot polarize transient current. The same is true for the output terminal of an N-terminal device when all N-1 inputs are connected in parallel.
Large-amplitude magnetization dynamics is substantially more complex compared to the low-amplitude linear regime, due to the inevitable emergence of nonlinearities. One of the fundamental nonlinear phenomena is the nonlinear damping enhancement, whic
h imposes strict limitations on the operation and efficiency of magnetic nanodevices. In particular, nonlinear damping prevents excitation of coherent magnetization auto-oscillations driven by the injection of spin current into spatially extended magnetic regions. Here, we propose and experimentally demonstrate that nonlinear damping can be controlled by the ellipticity of magnetization precession. By balancing different contributions to anisotropy, we minimize the ellipticity and achieve coherent magnetization oscillations driven by spatially extended spin current injection into a microscopic magnetic disk. Our results provide a novel route for the implementation of efficient active spintronic and magnonic devices driven by spin current.
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromag
netic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90 in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
