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The scheduled High Luminosity upgrade of the CERN Large Hadron Collider presents new challenges in terms of radiation hardness. As a consequence, campaigns to qualify the radiation hardness of detector sensors and components are undertaken worldwide. The effects of irradiation with beams of different particle species and energy, aiming to assess displacement damage in semiconductor devices, are communicated in terms of the equivalent 1 MeV neutron fluence, using the hardness factor for the conversion. In this work, the hardness factors for protons at three different kinetic energies have been measured by analysing the I-V and C-V characteristics of reverse biased diodes, pre- and post-irradiation. The sensors were irradiated at the MC40 Cyclotron of the University of Birmingham, the cyclotron at the Karlsruhe Institute of Technology, and the IRRAD proton facility at CERN, with the respective measured proton hardness factors being: 2.1 +/- 0.5 for 24 MeV, 2.2 +/- 0.4 for 23 MeV, and 0.62 +/- 0.04 for 23 GeV. The hardness factors currently used in these three facilities are in agreement with the presented measurements.
This paper presents the results of the proton irradiation of silicon photomulipliers (SiPMs) by mono-energetic 170 MeV protons with fluence up to 4.6$times$10$^{9}$ particles/cm$^2$. In our work, three types of silicon photodetectors from Hamamatsu w
This paper presents the results of neutron flux measurements at two irradiation facilities of the TRIGA Mark II reactor at ENEA Casaccia Research Center, Italy. The goal of these measurements is to provide a complete characterization of neutron irrad
In this work we study the performance of silicon photomultiplier (SiPM) light sensors after exposure to the JULIC cyclotron proton beam, of energy $sim$ 39 MeV, relative to their performance before exposure. The SiPM devices used in this study show a
In Japan, China and Russia, there are several test beam lines available or will become available in near future. Those are open for users who need electron, muon and charged pion beams with energies of 1-50 GeV for any tests of small-size detectors.
The properties of 60-{mu}m thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr b{eta}-source .