The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this article, a recipe for theoretical description of charge transport in AOSs is formulated using the percolation arguments. Comparison with the previous theoretical studies shows a superiority of the percolation approach. The results of the percolation theory are compared to experimental data obtained in various InGaZnO materials revealing parameters of the disorder potential in such AOS.
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