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We study spin-transport in bilayer-graphene (BLG), spin-orbit coupled to a tungsten di sulfide (WS$_2$) substrate, and measure a record spin lifetime anisotropy ~40-70, i.e. ratio between the out-of-plane $tau_{perp}$ and in-plane spin relaxation time $tau_{||}$. We control the injection and detection of in-plane and out-of-plane spins via the shape-anisotropy of the ferromagnetic electrodes. We estimate $tau_{perp}$ ~ 1-2 ns via Hanle measurements at high perpendicular magnetic fields and via a new tool we develop: Oblique Spin Valve measurements. Using Hanle spin-precession experiments we find a low $tau_{||}$ ~ 30 ps in the electron-doped regime which only weakly depends on the carrier density in the BLG and conductivity of the underlying WS$_2$, indicating proximity-induced spin-orbit coupling (SOC) in the BLG. Such high $tau_{perp}$ and spin lifetime anisotropy are clear signatures of strong spin-valley coupling for out-of-plane spins in BLG/WS$_2$ systems in the presence of SOC, and unlock the potential of BLG/transition metal dichalcogenide heterostructures for developing future spintronic applications.
We report the first measurements of spin injection in to graphene through a 20 nm thick tungsten disulphide (WS$_2$) layer, along with a modified spin relaxation time ({tau}s) in graphene in the WS$_2$ environment, via spin-valve and Hanle spin-prece
Spin-orbit coupling in graphene can be increased far beyond its intrinsic value by proximity coupling to a transition metal dichalcogenide. In bilayer graphene, this effect was predicted to depend on the occupancy of both graphene layers, rendering i
Large spin-orbital proximity effects have been predicted in graphene interfaced with a transition metal dichalcogenide layer. Whereas clear evidence for an enhanced spin-orbit coupling has been found at large carrier densities, the type of spin-orbit
In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS$_2$ and WSe$_2$ monolayers. We report the modification of the band characteristics
The optical and electronic properties of 2D semiconductors are intrinsically linked via the strong interactions between optically excited bound species and free carriers. Here we use near-field scanning microwave microscopy (SMM) to image spatial var