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تسجيل مستخدم جديدUtilization of the Superconducting Transition for Characterizing Low-Quality-Factor Superconducting Resonators
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Characterizing superconducting microwave resonators with highly dissipative elements is a technical challenge, but a requirement for implementing and understanding the operation of hybrid quantum devices involving dissipative elements, e.g. for thermal engineering and detection. We present experiments on $lambda/4$ superconducting niobium coplanar waveguide (CPW) resonators, terminating at the antinode by a dissipative copper microstrip via aluminum leads, such that the resonator response is difficult to measure in a typical microwave environment. By measuring the transmission both above and below the superconducting transition of aluminum, we are able to isolate the resonance. We then experimentally verify this method with copper microstrips of increasing thicknesses, from 50 nm to 150 nm, and measure quality factors in the range of $10sim67$ in a consistent way.
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Quantum bits (qubits) with long coherence times are an important element for the implementation of medium- and large-scale quantum computers. In the case of superconducting planar qubits, understanding and improving qubits quality can be achieved by
studying superconducting planar resonators. In this Paper, we fabricate and characterize coplanar waveguide resonators made from aluminum thin films deposited on silicon substrates. We perform three different substrate treatments prior to aluminum deposition: One chemical treatment based on a hydrofluoric acid clean, one physical treatment consisting of a thermal annealing at 880 degree Celsius in high vacuum, one combined treatment comprising both the chemical and the physical treatments. We first characterize the fabricated samples through cross-sectional tunneling electron microscopy acquiring electron energy loss spectroscopy maps of the samples cross sections. These measurements show that both the chemical and the physical treatments almost entirely remove native silicon oxide from the substrate surface and that their combination results in the cleanest interface. We then study the quality of the resonators by means of microwave measurements in the quantum regime, i.e., at a temperature T~10 mK and at a mean microwave photon number $langle n_{textrm{ph}} rangle sim 1$. In this regime, we find that both surface treatments independently improve the resonators intrinsic quality factor and that the highest quality factor is obtained for the combined treatment, $Q_{textrm{i}} sim 0.8$ million. Finally, we find that the TLS quality factor averaged over a time period of 3 h is $sim 3$ million at $langle n_{textrm{ph}} rangle sim 10$, indicating that substrate surface engineering can potentially reduce the TLS loss below other losses such as quasiparticle and vortex loss.
Quench of superconducting radio-frequency cavities frequently leads to the lowered quality factor Q0, which had been attributed to the additional trapped magnetic flux. Here we demonstrate that the origin of this magnetic flux is purely extrinsic to
the cavity by showing no extra dissipation (unchanged Q0) after quenching in zero magnetic field, which allows us to rule out intrinsic mechanisms of flux trapping such as generation of thermal currents or trapping of the rf field. We also show the clear relation of dissipation introduced by quenching to the orientation of the applied magnetic field and the possibility to fully recover the quality factor by requenching in the compensated field. We discover that for larger values of the ambient field, the Q-factor degradation may become irreversible by this technique, likely due to the outward flux migration beyond the normal zone opening during quench. Our findings are of special practical importance for accelerators based on low- and medium-beta accelerating structures residing close to focusing magnets, as well as for all high-Q cavity-based accelerators.
Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures
in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8times10^5$, while thicker SiN buffer layers led to reduced $Q_i$s at low power.
A model for the onset of the reduction in SRF cavity quality factor, the so-called Q-drop, at high accelerating electric fields is presented. Breakdown of the surface barrier against magnetic flux penetration at the cavity equator is considered to be
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Slow noise processes, with characteristic timescales ~1s, have been studied in planar superconducting resonators. A frequency locked loop is employed to track deviations of the resonator centre frequency with high precision and bandwidth. Comparative
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