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تسجيل مستخدم جديدEmergence of Flat-Band Magnetism and Half-Metallicity in Twisted Bilayer Graphene
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Evidence of flat-band magnetism and half-metallicity in compressed twisted bilayer graphene is provided with first-principles calculations. We show that dynamic band-structure engineering in twisted bilayer graphene is possible by controlling the chemical composition with extrinsic doping, the interlayer coupling strength with pressure, and the magnetic ordering with external electric field. By varying the rotational order and reducing the interlayer separation an unbalanced distribution of charge density resulting in the spontaneous apparition of localized magnetic moments without disrupting the structural integrity of the bilayer. Weak exchange correlation between magnetic moments is estimated in large unit cells. External electric field switches the local magnetic ordering from ferromagnetic to anti-ferromagnetic. Substitutional doping shifts the chemical potential of one spin distribution and leads to half-metallicity. Flakes of compressed twisted bilayer graphene exhibit spontaneous magnetization, demonstrating that correlation between magnetic moments is not a necessary condition for their formation.
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We discuss twisted bilayer graphene (TBG) based on a theorem of flat band ferromagnetism put forward by Mielke and Tasaki. According to this theorem, ferromagnetism occurs if the single particle density matrix of the flat band states is irreducible a
nd we argue that this result can be applied to the quasi-flat bands of TBG that emerge around the charge-neutrality point for twist angles around the magic angle $thetasim1.05^circ$. We show that the density matrix is irreducible in this case, thus predicting a ferromagnetic ground state for neutral TBG ($n=0$). We then show that the theorem can also be applied only to the flat conduction or valence bands, if the substrate induces a single-particle gap at charge neutrality. Also in this case, the corresponding density matrix turns out to be irreducible, leading to ferromagnetism at half filling ($n=pm2$).
The dominance of Coulomb interactions over kinetic energy of electrons in narrow, non-trivial moir{e} bands of magic-angle twisted bilayer graphene (TBG) gives rise to a variety of correlated phases such as correlated insulators, superconductivity, o
rbital ferromagnetism, Chern insulators and nematicity. Most of these phases occur at or near an integer number of carriers per moir{e} unit cell. Experimental demonstration of ordered states at fractional moir{e} band-fillings at zero applied magnetic field $B$, is a challenging pursuit. In this letter, we report the observation of states at half-integer band-fillings of $ u = 0.5$ and $3.5$ at $Bapprox 0$ in a TBG proximitized by a layer of tungsten diselenide (WSe$_2$). The magnetotransport data enables us to deduce features in the underlying band structure consistent with a spontaneously broken translational symmetry supercell with twice the area of the original TBG moir{e} cell. A series of Lifshitz transitions due to the changes in the topology of the Fermi surface implies the evolution of van Hove singularities (VHS) of the diverging density of states at a discrete set of partial fillings of flat bands. Further, we observe reset of charge carriers at $ u = 2, 3$. In addition to magnetotransport, we employ thermoelectricity as a tool to probe the system at $B=0$. Band structure calculations for a TBG moir{e} pattern, together with a commensurate density wave potential and spin-orbit coupling (SOC) terms, allow to obtain degeneracy-lifted, zone-folded moir{e} bands with spin-valley isospin ordering anisotropy that describe the states at half-integer fillings observed experimentally. Our results suggest the emergence of a spin-charge density wave ground state in TBG in the zero $B-$ field limit.
Twisted graphene bilayers provide a versatile platform to engineer metamaterials with novel emergent properties by exploiting the resulting geometric moir{e} superlattice. Such superlattices are known to host bulk valley currents at tiny angles ($alp
haapprox 0.3 ^circ$) and flat bands at magic angles ($alpha approx 1^circ$). We show that tuning the twist angle to $alpha^*approx 0.8^circ$ generates flat bands away from charge neutrality with a triangular superlattice periodicity. When doped with $pm 6$ electrons per moire cell, these bands are half-filled and electronic interactions produce a symmetry-broken ground state (Stoner instability) with spin-polarized regions that order ferromagnetically. Application of an interlayer electric field breaks inversion symmetry and introduces valley-dependent dispersion that quenches the magnetic order. With these results, we propose a solid-state platform that realizes electrically tunable strong correlations.
Magic angle twisted bilayer graphene has emerged as a powerful platform for studying strongly correlated electron physics, owing to its almost dispersionless low-energy bands and the ability to tune the band filling by electrostatic gating. Technique
s to control the twist angle between graphene layers have led to rapid experimental progress but improving sample quality is essential for separating the delicate correlated-electron physics from disorder effects. Owing to the 2D nature of the system and the relatively low carrier density, the samples are highly susceptible to small doping inhomogeneity which can drastically modify the local potential landscape. This potential disorder is distinct from the twist-angle variation which has been studied elsewhere. Here, by using low temperature scanning tunneling spectroscopy and planar tunneling junction measurements, we demonstrate that flat bands in twisted bilayer graphene can amplify small doping inhomogeneity that surprisingly leads to carrier confinement, which in graphene could previously only be realized in the presence of a strong magnetic field.
Atomic defects have a significant impact in the low-energy properties of graphene systems. By means of first-principles calculations and tight-binding models we provide evidence that chemical impurities modify both the normal and the superconducting
states of twisted bilayer graphene. A single hydrogen atom attached to the bilayer surface yields a triple-point crossing, whereas self-doping and three-fold symmetry-breaking are created by a vacant site. Both types of defects lead to time-reversal symmetry-breaking and the creation of local magnetic moments. Hydrogen-induced magnetism is found to exist also at the doping levels where superconductivity appears in magic angle graphene superlattices. As a result, the coexistence of superconducting order and defect-induced magnetism yields in-gap Yu-Shiba-Rusinov excitations in magic angle twisted bilayer graphene.
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