Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd-vacancies introduce localized electronic states resulting in the variable range hopping transport at low temperatures. At a fixed Nd-vacancies concentration, a crossover from Mott to Efros-Shklovskii (ES) variable range hopping transport was observed with decreasing temperature. With increasing disorder, a sign reversal of magnetoresistance from positive to negative was observed revealing interplay between intra-state interaction and the energy dependence of the localization length as a function of disorder. These findings highlight the important role of stoichiometry when exploring intrinsic effect using heterostructure and interfaces in addition to offering broad opportunity to tailor low temperature transport using non-stoichiometry defects.
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