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A monolayer of WTe$_2$ has been shown to display quantum spin Hall (QSH) edge modes persisting up to 100~K in transport experiments. Based on density-functional theory calculations and symmetry-based model building including the role of correlations and substrate support, we develop an effective electronic model for WTe$_2$ which fundamentally differs from other prototypical QSH settings: we find that the extraordinary robustness of quantum spin Hall edge modes in WTe$_2$ roots in a glide symmetry due to which the topological gap opens away from high-symmetry points in momentum space. While the indirect bulk gap is much smaller, the glide symmetry implies a large direct gap of up to 1~eV in the Brillouin zone region of the dispersing edge modes, and hence enables sharply boundary-localized QSH edge states depending on the specific boundary orientation.
The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T-WTe$_2$ and is characterized by a band gap in the two-dimensional (2D) interior and helical one-dimensional (1D) edge states. Inducing
The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) 1T-WTe$_2$. However, the robustness of this topological prot
Conductance of the edge modes as well as conductance across the co-propagating edge modes around the u = 4/3, 5/3 and 2 quantum Hall states are measured by individually exciting the modes. Temperature dependent equilibration rates of the outer unity
The two-dimensional topological insulators (2DTI) host a full gap in the bulk band, induced by spin-orbit coupling (SOC) effect, together with the topologically protected gapless edge states. However, the SOC-induced gap is usually small, and it is c
We propose and analyse a scheme for performing a long-range entangling gate for qubits encoded in electron spins trapped in semiconductor quantum dots. Our coupling makes use of an electrostatic interaction between the state-dependent charge configur