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By combining analytical and numerical approaches, we theoretically investigate the effect of fabrication imperfections, e.g. roughness at metal interfaces, on nanometer metal-insulator-metal waveguides supporting slow gap-plasmon modes. Realistic devices with vapor deposition- and chemically-grown metal films are considered. We obtain quantitative predictions for the attenuations induced by absorption and by backscattering, and analytically derive how both attenuations scale with respect to the group velocity. Depending on the material parameters and fabrication quality, roughness-induced backscattering is find to be a significant additional source of attenuation for small group velocities, which is often neglected in the literature.
As an analogue of electromagnetically induced transparency (EIT), plasmon-induced transparency (PIT) has been realized both in plasmonic metamaterial and waveguide structures. Via near-field coupling within unit cells, PIT with broadband could be pro
We introduce phase-change material Ge2Sb2Te5 (GST) into metal-insulator-metal (MIM) waveguide systems to realize chipscale plasmonic modulators and switches in the telecommunication band. Benefitting from the high contrast of optical properties betwe
The gigantic reduction of the electric resistivity under the applied magnetic field, CMR effect, is now widely accepted to appear in the vicinity of the insulator to metal transition of the perovskite manganites. Recently, we have discovered the firs
Nanophotonic (nanoplasmonic) structures confine, guide, and concentrate light on the nanoscale. Advancement of nanophotonics critically depends on active nanoscale control of these phenomena. Localized control of the insulator and metallic phases of
We explore the outcomes of detailed microscopic models by calculating second- and third-harmonic generation from thin film surfaces with discontinuous free-electron densities. These circumstances can occur in structures consisting of a simple metal m