اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدLow-power continuous-wave second harmonic generation in semiconductor nanowires
323
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Semiconductor nanowires (NWs) are promising for realizing various on-chip nonlinear optical devices, due to their nanoscale lateral confinement and strong light-matter interaction. However, high-intensity pulsed pump lasers are typically needed to exploit their optical nonlinearity because light couples poorly with nanometric-size wires. Here, we demonstrate microwatts continuous-wave light pumped second harmonic generation (SHG) in AlGaAs NWs by integrating them with silicon planar photonic crystal cavities. Light-NW coupling is enhanced effectively by the extremely localized cavity mode at the subwavelength scale. Strong SHG is obtained even with a continuous-wave laser excitation with a pump power down to ~3 uW, and the cavity-enhancement factor is estimated around 150. Additionally, in the integrated device, the NWs SHG is more than two-order of magnitude stronger than third harmonic generations in the silicon slab, though the NW only couple s with less than 1% of the cavity mode. This significantly reduced power-requirement of NWs nonlinear frequency conversion would promote NW-based building blocks for nonlinear optics, specially in chip-integrated coherent light sources, entangled photon-pairs and signal processing devices.
قيم البحث
اقرأ أيضاً
We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and conversion effi
ciency $P_{rm out}/P_{rm in, coupled}^2 = 430%/{rm W}$. The large electronic band gap of GaP minimizes absorption loss, allowing efficient conversion. Our results are promising for integrated, low-power light sources and on-chip reduction of input power in other nonlinear processes.
Resonant metasurfaces are an attractive platform for enhancing the non-linear optical processes, such as second harmonic generation (SHG), since they can generate very large local electromagnetic fields while relaxing the phase-matching requirements.
Here, we take this platform a step closer to the practical applications by demonstrating visible range, continuous wave (CW) SHG. We do so by combining the attractive material properties of gallium phosphide with engineered, high quality-factor photonic modes enabled by bound states in the continuum. For the optimum case, we obtain efficiencies around 5e-5 % W$^{-1}$ when the system is pumped at 1200 nm wavelength with CW intensities of 1 kW/cm$^2$. Moreover, we measure external efficiencies as high as 0.1 % W$^{-1}$ with pump intensities of only 10 MW/cm$^2$ for pulsed irradiation. This efficiency is higher than the values previously reported for dielectric metasurfaces, but achieved here with pump intensities that are two orders of magnitude lower.
We model second harmonic generation in subwavelength III-V-on-insulator waveguides. The large index contrast induces strong longitudinal electric field components that play an important role in the nonlinear conversion. We show that many different wa
veguide dimensions are suitable for efficient conversion of a fundamental quasi-TE pump mode around the 1550 nm telecommunication wavelength to a higher-order second harmonic mode.
A scheme for active second harmonics generation is suggested. The system comprises $N$ three-level atoms in ladder configuration, situated into resonant cavity. It is found that the system can lase in either superradiant or subradiant regime, dependi
ng on the number of atoms $N$. When N passes some critical value the transition from the super to subradiance occurs in a phase-transition-like manner. Stability study of the steady state supports this conclusion.
We report on the systematical study of the second-harmonic generation (SHG) in single zinc sulfide nanowires (ZnS NWs). The high quality ZnS NWs with round cross-section were fabricated by chemical vapor deposition method. The transmission electron m
icroscopy images show that the actual growth-axis has a deviation angle of 0o~20o with the preferential growth direction [120], which leads to the various polarization-dependent SHG response patterns in different individual ZnS NWs. The SHG response is quite sensitive to the orientations of c-axis as well as the (100) and (010) crystal-axis of ZnS NWs, thus all the three crystal-axis orientations of ZnS NWs are precisely determined by the SHG method. A high SHG conversion efficiency of 7*10^(-6) is obtained in single ZnS NWs, which shows potential applications in nanoscale ultraviolet light source, nonlinear optical microscopy and nanophotonic devices.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
