ﻻ يوجد ملخص باللغة العربية
Similarly to their purely electric counterparts, spintronic circuits may be presented as networks of lumped elements. Due to interplay between spin and charge currents, each element is described by a matrix conductance. We establish reciprocity relations between the entries of the conductance matrix of a multi-terminal linear device, comprising normal metallic and strong ferromagnetic elements with spin-inactive interfaces between them. In particular, reciprocity equates the spin transmissions through a two-terminal element in the opposite directions. When applied to geometric spin ratchets, reciprocity shows that certain effects, announced for such devices, are, in fact, impossible. Finally, we discuss the relation between our work and the spintronic circuit theory formalism.
Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an exceptionall
Non-reciprocity of signal transmission enhances capacity of communication channels and protects transmission quality against possible signal instabilities, thus becoming an important component ensuring coherent information processing. However, non-re
Magnon spin Nernst effect was recently proposed as an intrinsic effect in antiferromagnets, where spin diffusion and boundary spin transmission have been ignored. However, diffusion processes are essential to convert a bulk spin current into boundary
The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an illustration, spin-
The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier separation