اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدStructural, electronic and intrinsic transport in two-dimensional borophene sheets
62
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Experimental realization of two-dimensional boron sheets was reported very recently by Feng et. al. using molecular beam epitaxy on silver (111) surface. These boron sheets possess promising electronic and transport properties. We performed the density functional theory (DFT) calculation to see the stability of two $beta_{12}$ and $chi$ polymorphs of boron under strain and further studied electronic and transport properties. We verified the directional dependency in electron transport properties in these two boron polymorphs. Here we report tunable anisotropic transport properties of the borophenes. We also investigated current-voltage characteristics in low bias regime after applying strain on these systems to see how this external strain affects the anisotropy of current.
قيم البحث
اقرأ أيضاً
In this paper we review the theory of silicon nanowires. We focus on nanowires with diameters below 10 nm, where quantum effects become important and the properties diverge significantly from those of bulk silicon. These wires can be efficiently trea
ted within electronic structure simulation methods and will be among the most important functional blocks of future nanoelectronic devices. Firstly, we review the structural properties of silicon nanowires, emphasizing the close connection between the growth orientation, the cross-section and the bounding facets. Secondly, we discuss the electronic structure of pristine and doped nanowires, which hold the ultimate key for their applicability in novel electronic devices. Finally, we review transport properties where some of the most important limitations in the performances of nanowire-based devices can lay. Many of the unique properties of these systems are at the same time defying challenges and opportunities for great technological advances.
Nanoscience offers a unique opportunity to design modern materials from the bottom up, via low-cost, solution processed assembly of nanoscale building blocks. These systems promise electronic band structure engineering using not only the nanoscale st
ructural modulation, but also the mesoscale spatial patterning, although experimental realization of the latter has been challenging. Here we design and fabricate a new type of artificial solid by stacking graphene on a self-assembled, nearly periodic array of nanospheres, and experimentally observe superlattice miniband effects. We find conductance dips at commensurate fillings of charge carriers per superlattice unit cell, which are key features of minibands that are induced by the quasi-periodic deformation of the graphene lattice. These dips become stronger when the lattice strain is larger. Using a tight-binding model, we simulate the effect of lattice deformation as a parameter affecting the inter-atomic hopping integral, and confirm the superlattice transport behavior. This 2D material-nanoparticle heterostructure enables facile band structure engineering via self-assembly, promising for large area electronics and optoelectronics applications.
We investigate the size scaling of the conductance of surface disordered graphene sheets of width W and length L. Metallic leads are attached to the sample ends across its width. At E ~ 0, the conductance scales with the system size as follows: i) Fo
r constant W/L, it remains constant as size is increased, at a value which depends almost lineally on that ratio; this scaling allows the definition of a conductivity value that results similar to the experimental one. ii) For fixed width, the conductance decreases exponentially with length L, both for ordered and disordered samples. Disorder reduces the exponential decay, leading to a higher conductance. iii) For constant length, conductance increases linearly with width W, a result that is exclusively due to the tails of the states of the metallic wide contact. iv) The average conductance does not show an appreciable dependence on magnetic field. Away from E = 0, the conductance shows the behavior expected in two-dimensional systems with surface disorder, i.e., ballistic transport.
Topological states of matter have attracted a lot of attention due to their many intriguing transport properties. In particular, two-dimensional topological insulators (2D TI) possess gapless counter propagating conducting edge channels, with opposit
e spin, that are topologically protected from backscattering. Two basic features are supposed to confirm the existence of the ballistic edge channels in the submicrometer limit: the 4-terminal conductance is expected to be quantized at the universal value $2e^{2}/h$, and a nonlocal signal should appear due to a net current along the sample edge, carried by the helical states. On the other hand for longer channels the conductance has been found to deviate from the quantized value. This article reviewer the experimental and theoretical work related to the transport in two-dimensional topological insulators (2D-TI), based on HgTe quantum wells in zero magnetic field. We provide an overview of the basic mechanisms predicting a deviation from the quantized transport due to backscattering (accompanied by spin-flips) between the helical channels. We discuss the details of the model, which takes into account the edge and bulk contribution to the total current and reproduces the experimental results.
We report the observation of commensurability oscillations in an AlAs two-dimensional electron system where two conduction-band valleys with elliptical in-plane Fermi contours are occupied. The Fourier power spectrum of the oscillations shows two fre
quency components consistent with those expected for the Fermi contours of the two valleys. From an analysis of the spectra we deduce $m_l/m_t=5.2pm0.5$ for the ratio of the longitudinal and transverse electron effective masses.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
