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Energy levels of nitrogen-vacancy centers in diamond were investigated using optically detected magnetic-resonance spectroscopy near the electronic ground-state level anticrossing (GSLAC) at an axial magnetic field around 102.4~mT in diamond samples with a nitrogen concentration of 1~ppm and 200~ppm. By applying radiowaves in the frequency ranges from 0 to 40 MHz and from 5.6 to 5.9 GHz, we observed transitions that involve energy levels mixed by the hyperfine interaction. We developed a theoretical model that describes the level mixing, transition energies, and transition strengths between the ground-state sublevels, including the coupling to the nuclear spin of the NV centertextquotesingle s $^{14}$N and $^{13}$C atoms. The calculations were combined with the experimental results by fitting the ODMR spectral lines based on a theoretical model, which yielded information about the polarization of nuclear spins. This study is important for the optimization of experimental conditions in GSLAC-based applications, e.g., microwave-free magnetometry and microwave-free nuclear-magnetic-resonance probes.
The nitrogen-vacancy center (NV center) in diamond at magnetic fields corresponding to the ground state level anticrossing (GSLAC) region gives rise to rich photoluminescence (PL) signals due to the vanishing energy gap between the electron spin stat
We report a study of the magnetic field dependence of photoluminescence of NV$^-$ centers (negatively charged nitrogen-vacancy centers) in diamond single crystals. In such a magnetic field dependence characteristic sharp features are observed, which
We report a study of the magnetic field dependence of the photo-luminescence of NV$^-$ centers (negatively charged nitrogen-vacancy centers) in diamond single crystals. In such a magnetic field dependence characteristic lines are observed, which are
Hybrid quantum devices, in which disparate quantum elements are combined in order to achieve enhanced functionality, have received much attention in recent years due to their exciting potential to address key problems in quantum information processin
Characterizing the local internal environment surrounding solid-state spin defects is crucial to harnessing them as nanoscale sensors of external fields. This is especially germane to the case of defect ensembles which can exhibit a complex interplay