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Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine interactions, while monolayer 2H-transition metal dichalcogenides (TMDs) possess a Zeeman effect-like band splitting in which the spin and valley degrees of freedom are nondegenerate. Monolayer 1T-TMDs are 2D topological insulators and are expected to host Majorana zero modes when they are placed in contact with S-wave superconductors. Single electron transport as well as the superconductor proximity effect in these materials are viable for use in both conventional quantum computing and fault-torrent topological quantum computing. In this chapter, we review a selection of theoretical and experimental studies addressing the issues mentioned above. We will focus on: (1) the confinement and manipulation of charges in nanostructures fabricated from graphene and 2H-TMDs (2) 2D materials-based Josephson junctions for possible superconducting qubits (3) the quantum spin Hall states in 1T-TMDs and their topological properties. We aim to outline the current challenges and suggest how future work will be geared towards developing quantum computing devices in 2D materials.
The recent discovery of ferromagnetism in 2D van der Waals (vdw) crystals has generated widespread interest, owing to their potential for fundamental and applied research. Advancing the understanding and applications of vdw magnets requires methods t
Results from four different approximations to the phonon-assisted quantum adsorption rate for cold atoms on a 2D material are compared and contrasted: (1) a loop expansion (LE) based on the atom-phonon coupling, (2) non-crossing approximation (NCA),
Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scena
Electronic transport properties for single-molecule junctions have been widely measured by several techniques, including mechanically controllable break junctions, electromigration break junctions or by means of scanning tunneling microscopes. In par
We demonstrate how gradient ascent pulse engineering optimal control methods can be implemented on donor electron spin qubits in Si semiconductors with an architecture complementary to the original Kanes proposal. We focus on the high-fidelity contro