اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدOn the Emergence of Topologically Protected Boundary States in Topological/Normal Insulator Heterostructures
108
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We have performed a systematic investigation of the formation of topologically protected boundary states (TPBS) in topological/normal insulators (TI/NI) heterostructures. Using a recently developed scheme to construct {it ab-initio} tight-binding Hamiltonian matrices from density functional theory (DFT) calculations, we studied systems of realistic size with high accuracy and control over the relevant parameters such as TI and NI band alignment, NI gap and spin-orbit coupling strength. Our findings point to the existence of an NI critical thickness for the emergence of TPBS and to the importance of the band alignment between the TI and NI for the appearance of the TPBS. We chose Bi$_{2}$Se$_{3}$ as a prototypical case where the topological/normal insulator behavior is modeled by regions with/without spin-orbit coupling. Finally, we validate our approach comparing our model with fully relativistic DFT calculations for TI/NI heterostructures of Bi$_{2}$Se$_{3}$/Sb$_{2}$Se$_{3}$.
قيم البحث
اقرأ أيضاً
Quantum transport measurements including the Altshuler-Aronov-Spivak (AAS) and Aharonov-Bohm (AB) effects, universal conductance fluctuations (UCF), and weak anti-localization (WAL) have been carried out on epitaxial Bi thin films ($10-70$ bilayers)
on Si(111). The results show that while the film interior is insulating all six surfaces of the Bi thin films are robustly metallic. We propose that these properties are the manifestation of a novel phenomenon, namely, a topologically trivial bulk system can become topologically non-trivial when it is made into a thin film. We stress that whats observed here is entirely different from the predicted 2D topological insulating state in a single bilayer Bi where only the four side surfaces should possess topologically protected gapless states.
Plasmons, the collective excitations of electrons in the bulk or at the surface, play an important role in the properties of materials, and have generated the field of Plasmonics. We report the observation of a highly unusual acoustic plasmon mode on
the surface of a three-dimensional topological insulator (TI), Bi2Se3, using momentum resolved inelastic electron scattering. In sharp contrast to ordinary plasmon modes, this mode exhibits almost linear dispersion into the second Brillouin zone and remains prominent with remarkably weak damping not seen in any other systems. This behavior must be associated with the inherent robustness of the electrons in the TI surface state, so that not only the surface Dirac states but also their collective excitations are topologically protected. On the other hand, this mode has much smaller energy dispersion than expected from a continuous media excitation picture, which can be attributed to the strong coupling with surface phonons.
Recent theoretical studies have extended the Berry phase framework to account for higher electric multipole moments, quadrupole and octupole topological phases have been proposed. Although the two-dimensional quantized quadrupole insulators have been
demonstrated experimentally, octupole topological phases have not previously been observed experimentally. Here we report on the experimental realization of classical analog of octupole topological insulator in the electric circuit system. Three-dimensional topolectrical circuits for realizing such topological phases are constructed experimentally. We observe octupole topological states protected by the topology of the bulk, which are localized at the corners. Our results provide conclusive evidence of a form of robustness against disorder and deformation, which is characteristic of octupole topological insulators. Our study opens a new route toward higher-order topological phenomena in three-dimensions and paves the way for employing topolectrical circuitry to study complex topological phenomena.
The modern theory of electric polarization in crystals associates the dipole moment of an insulator with a Berry phase of its electronic ground state [1, 2]. This concept constituted a breakthrough that not only solved the long-standing puzzle of how
to calculate dipole moments in crystals, but also lies at the core of the theory of topological band structures in insulators and superconductors, including the quantum anomalous Hall insulator [3, 4] and the quantum spin Hall insulator [5-7], as well as quantized adiabatic pumping processes [8-10]. A recent theoretical proposal extended the Berry phase framework to account for higher electric multipole moments [11], revealing the existence of topological phases that have not previously been observed. Here we demonstrate the first member of this predicted class -a quantized quadrupole topological insulator- experimentally produced using a GHz-frequency reconfigurable microwave circuit. We confirm the non-trivial topological phase through both spectroscopic measurements, as well as with the identification of corner states that are manifested as a result of the bulk topology. We additionally test a critical prediction that these corner states are protected by the topology of the bulk, and not due to surface artifacts, by deforming the edge between the topological and trivial regimes. Our results provide conclusive evidence of a unique form of robustness which has never previously been observed.
The synthesis of new materials with novel or useful properties is one of the most important drivers in the fields of condensed matter physics and materials science. Discoveries of this kind are especially significant when they point to promising futu
re basic research and applications. Van der Waals bonded materials comprised of lower-dimensional building blocks have been shown to exhibit emergent properties when isolated in an atomically thin form1-8. Here, we report the discovery of a transition metal chalcogenide in a heretofore unknown segmented linear chain form, where basic building blocks each consisting of two hafnium atoms and nine tellurium atoms (Hf2Te9) are van der Waals bonded end-to-end. First-principle calculations based on density functional theory reveal striking crystal-symmetry-related features in the electronic structure of the segmented chain, including giant spin splitting and nontrivial topological phases of selected energy band states. Atomic-resolution scanning transmission electron microscopy reveals single segmented Hf2Te9 chains isolated within the hollow cores of carbon nanotubes, with a structure consistent with theoretical predictions. Van der Waals-bonded segmented linear chain transition metal chalcogenide materials could open up new opportunities in low-dimensional, gate-tunable, magnetic and topological crystalline systems.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
