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We report experimental evidence of longitudinal optical (LO) phonon-intersubband polariton scattering processes under resonant injection of light. The scattering process is resonant with both the initial (upper polariton) and final (lower polariton) states and is induced by the interaction of confined electrons with longitudinal optical phonons. The system is optically pumped with a mid-IR laser tuned between 1094 cm-1 and 1134 cm-1 (lambda=9.14 um and lambda=8.82 um). The demonstration is provided for both GaAs/AlGaAs and InGaAs/AlInAs doped quantum well systems whose intersubband plasmon lies at lambda=10 um wavelength. In addition to elucidating the microscopic mechanism of the polariton-phonon scattering, that is found to differ substantially from the standard single particle electron-LO phonon scattering mechanism, this work constitutes the first step towards the hopefully forthcoming demonstration of an intersubband polariton laser.
We investigate an optically trapped exciton-polariton condensate and observe temporal coherence beyond 1~ns duration. Due to the reduction of the spatial overlap with the thermal reservoir of excitons, the coherence time of the trapped condensate is
A signature of the scattering between microcavity polaritons and longitudinal optical phonons has been observed in the electroluminescence spectrum of an intersubband device operating in the light-matter strong coupling regime. By electrical pumping
We observe for the first time two-photon excited condensation of exciton-polaritons. The angle-resolved photoluminescence (PL) from the Lower Polariton (LP) ground state in our planar GaAs-based microcavity structure exhibits a clear intensity thresh
Highly polarized nuclear spins within a semiconductor quantum dot (QD) induce effective magnetic (Overhauser) fields of up to several Tesla acting on the electron spin or up to a few hundred mT for the hole spin. Recently this has been recognized as
Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch