اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدNovel Two-Dimensional Silicon Dioxide with in-plane Negative Poissons Ratio
107
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Silicon dioxide or silica, normally existing in various bulk crystalline and amorphous forms, is recently found to possess a two-dimensional structure. In this work, we use ab initio calculation and evolutionary algorithm to unveil three new 2D silica structures whose themal, dynamical and mechanical stabilities are compared with many typical bulk silica. In particular, we find that all these three 2D silica have large in-plane negative Poissons ratios with the largest one being double of penta-graphene and three times of borophenes. The negative Poissons ratio originates from the interplay of lattice symmetry and Si-O tetrahedron symmetry. Slab silica is also an insulating 2D material, with the highest electronic band gap (> 7 eV) among reported 2D structures. These exotic 2D silica with in-plane negative Poissons ratios and widest band gaps are expected to have great potential applications in nanomechanics and nanoelectronics.
قيم البحث
اقرأ أيضاً
As a basic mechanical parameter, Poissons ratio ({ u}) measures the mechanical responses of solids against external loads. In rare cases, materials have a negative Poissons ratio (NPR), and present an interesting auxetic effect. That is, when a mater
ial is stretched in one direction, it will expand in the perpendicular direction. To design modern nanoscale electromechanical devices with special functions, two dimensional (2D) auxetic materials are highly desirable. In this work, based on first principles calculations, we rediscover the previously proposed {delta}-phosphorene ({delta}-P) nanosheets [Jie Guan et al., Phys. Rev. Lett. 2014, 113, 046804] are good auxetic materials with a high NPR. The results show that the Youngs modulus and Poissons ratio of {delta}-P are all anisotropic. The NPR value along the grooved direction is up to -0.267, which is much higher than the recently reported 2D auxetic materials. The auxetic effect of {delta}-P originated from its puckered structure is robust and insensitive to the number of layers due to weak interlayer interactions. Moreover, {delta}-P possesses good flexibility because of its relatively small Youngs modulus and high critical crack strain. If {delta}-P can be synthesized, these extraordinary properties would endow it great potential in designing low dimensional electromechanical devices.
We present first-principles calculations of elastic properties of multilayered two-dimensional crystals such as graphene, h-BN and 2H-MoS2 which shows that their Poissons ratios along out-of-plane direction are negative, near zero and positive, respe
ctively, spanning all possibilities for sign of the ratios. While the in-plane Poissons ratios are all positive regardless of their disparate electronic and structural properties, the characteristic interlayer interactions as well as layer stacking structures are shown to determine the sign of their out-of-plane ratios. Thorough investigation of elastic properties as a function of the number of layers for each system is also provided, highlighting their intertwined nature between elastic and electronic properties.
We study the elastic response of composites of rods embedded in elastic media. We calculate the micro-mechanical response functions, and bulk elastic constants as functions of rod density. We find two fixed points for Poissons ratio with respect to t
he addition of rods in 3D composites: there is an unstable fixed point for Poissons ratio=1/2 (an incompressible system) and a stable fixed point for Poissons ratio=1/4 (a compressible system). We also derive an approximate expression for the elastic constants for arbitrary rod density that yields exact results for both low and high density. These results may help to explain recent experiments [Physical Review Letters 102, 188303 (2009)] that reported compressibility for composites of microtubules in F-actin networks.
Negative longitudinal magnetoresistance (NLMR) has been reported in a variety of materials and has attracted extensive attention as an electrotransport hallmark of topological Weyl semimetals. However, its origin is still under debate. Here, we demon
strate that the NLMR in a two dimensional electron gas can be influenced by the measurement current. While the NLMR persists up to 130 K, its magnitude and magnetic field response become dependent on the applied current below 60 K. The tunable NLMR at low and high currents can be best attributed to quantum interference and disorder scattering effects, respectively. This work uncovers non-Ohmic NLMR in a non-Weyl material and highlights potential effects of the measurement current in elucidating electrotransport phenomena. We also demonstrate that NLMRs can be a valuable phenomenon in revealing the origins of other properties, such as negative MRs in perpendicular magnetic fields.
Based on variable components global optimization algorithm, we predict a stable two-dimensional (2D) phase of boron phosphide with 1:5 stoichiometry, i.e. boron pentaphosphide (BP_5) monolayer, which has a lower formation energy than that of the comm
only believed graphitic phase (g-BP). BP_5 monolayer is a multiferroic material with coupled ferroelasticity and ferroelectricity. The predicted reversible strain is up to 41.41%, which is the largest among all reported ferroelastic materials. Due to the non-centrosymmetric structure and electronegativity differences between boron and phosphorus atoms, an in-plane spontaneous polarization of 326.0 pC/m occurs in BP_5. Moreover, the recently hunted negative Poissons ratio property, is also observed in BP_5. As an indirect semiconductor with a band gap of 1.34 eV, BP_5 displays outstanding optical and electronic properties, for instance strongly anisotropic visible-light absorption and high carrier mobility. The rich and extraordinary properties of BP_5 make it a potential nanomaterial for designing electromechanical or optoelectronic devices, such as nonvolatile memory with conveniently readable/writeable capability. Finally, we demonstrate that AlN (010) surface could be a suitable substrate for epitaxy growth of BP_5 monolayer.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
