اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدHow to distinguish between interacting and noninteracting molecules in tunnel junctions
54
0
0.0
(
0
)
نشر من قبل
Miguel Ambrosio Sierra M A Sierra
تاريخ النشر
2018
مجال البحث
فيزياء
والبحث باللغة
English
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Recent experiments demonstrate a temperature control of the electric conduction through a ferrocene-based molecular junction. Here we examine the results in view of determining means to distinguish between transport through single-particle molecular levels or via transport channels split by Coulomb repulsion. Both transport mechanisms are similar in molecular junctions given the similarities between molecular intralevel energies and the charging energy. We propose an experimentally testable way to identify the main transport process. By applying a magnetic field to the molecule, we observe that an interacting theory predicts a shift of the conductance resonances of the molecule whereas in the noninteracting case each resonance is split into two peaks. The interaction model works well in explaining our experimental results obtained in a ferrocene-based single-molecule junction, where the charge degeneracy peaks shift (but do not split) under the action of an applied 7-Tesla magnetic field. This method is useful for a proper characterization of the transport properties of molecular tunnel junctions.
قيم البحث
اقرأ أيضاً
In this paper, a theoretical approach, comprising the non-equilibrium Greens function method for electronic transport and Landau-Khalatnikov equation for electric polarization dynamics, is presented to describe polarization-dependent tunneling electr
oresistance (TER) in ferroelectric tunnel junctions. Using appropriate contact, interface, and ferroelectric parameters, measured current-voltage characteristic curves in both inorganic (Co/BaTiO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$) and organic (Au/PVDF/W) ferroelectric tunnel junctions can be well described by the proposed approach. Furthermore, under this theoretical framework, the controversy of opposite TER signs observed experimentally by different groups in Co/BaTiO$_{3}$/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ systems is addressed by considering the interface termination effects using the effective contact ratio, defined through the effective screening length and dielectric response at the metal/ferroelectric interfaces. Finally, our approach is extended to investigate the role of a CoO$_{x}$ buffer layer at the Co/BaTiO$_{3}$ interface in a ferroelectric tunnel memristor. It is shown that, to have a significant memristor behavior, not only the interface oxygen vacancies but also the CoO$_{x}$ layer thickness may vary with the applied bias.
The current-voltage ($IV$) characteristics beyond the linear response regime of magnetic tunnel junction (MTJ) is systematically investigated. We find a clear negative correlation between the two coefficients to characterize the linear ($I$$propto$$V
$) and the lowest-order nonlinear ($I$$propto$$V^3$) currents, which holds regardless of the temperature and the thickness of the tunnel barrier. This observation cannot simply be explained by the standard tunneling model such as the Brinkman model, suggesting a mechanism intrinsic to MTJ. We propose a phenomenological model based on the Julliere model that attributes the observed negative correlation to the spin-flip tunneling assisted by a magnon. These results suggest a fundamental law between the linear and the nonlinear response of MTJ.
Magnetic tunnel junctions are nanoscale spintronic devices with microwave generation and detection capabilities. Here we use the rectification effect called spin-diode in a magnetic tunnel junction to wirelessly detect the microwave emission of anoth
er junction in the auto-oscillatory regime. We show that the rectified spin-diode voltage measured at the receiving junction end can be reconstructed from the independently measured auto-oscillation and spin diode spectra in each junction. Finally we adapt the auto-oscillator model to the case of spin-torque oscillator and spin-torque diode and we show that accurately reproduces the experimentally observed features. These results will be useful to design circuits and chips based on spintronic nanodevices communicating through microwaves.
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs crucial for e
xploring this regime. Here we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{_2}O{_3}/NiFe MTJ, whereas we only observe a gradual decrease of tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime, in which the spin-polarized charge accumulation at the two interfaces plays a crucial role.
We calculate the conductance through double junctions of the type M(inf.)-Sn-Mm-Sn-M(inf.) and triple junctions of the type M(inf.)-Sn-Mm-Sn-Mm-Sn-M(inf.), where M(inf.) are semi-infinite metallic electrodes, Sn are n layers of semiconductor and Mm a
re m layers of metal (the same as the electrodes), and compare the results with the conductance through simple junctions of the type M(inf.)-Sn-M(inf.). The junctions are bi-dimensional and their parts (electrodes and active region) are periodic in the direction perpendicular to the transport direction. To calculate the conductance we use the Greens Functions Landauer-B$ddot{u}$ttiker formalism. The electronic structure of the junction is modeled by a tight binding Hamiltonian. For a simple junction we find that the conductance decays exponentially with semiconductor thickness. For double and triple junctions, the conductance oscillates with the metal in-between thickness, and presents peaks for which the conductance is enhanced by 1-4 orders of magnitude. We find that when there is a conductance peak, the conductance is higher to that corresponding to a simple junction. The maximum ratio between the conductance of a double junction and the conductance of a simple junction is 146 %, while for a triple junction it is 323 %. These oscillations in the conductance are explained in terms of the energy spectrum of the junctions active region.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
