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We propose and demonstrate a low-cost integrated photonic chip fabricated in a SOI foundry capable of simultaneously routing and amplifying light in a chip. This device is able to compensate insertion losses in photonic routers. It consists of standard Si/SiO2 ring resonators with Er:Al2O3 as the upper cladding layer, employed using only one simple post-processing step. This resulted in a measured on/off gain of 0.9 dB, with a footprint smaller than 0.002 mm2, and expected bit rates as high as 40Gb/s based on the resonance quality-factor. We show that the on/off gain value can be further increased using coupled rings to reach net gain values of 4 dB.
By harnessing quantum superposition and entanglement, remarkable progress has sprouted over the past three decades from different areas of research in communication computation and simulation. To further improve the processing ability of microwave ph
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $chi^{(2)}$ and $chi^{(3)}$ coefficients, a high refractive index ($>3$), and transpare
Silicon photonics is becoming a leading technology in photonics, displacing traditional fiber optic transceivers in long-haul and intra-data-center links and enabling new applications such as solid-state LiDAR (Light Detection and Ranging) and optica
Integrated-photonics microchips now enable a range of advanced functionalities for high-coherence applications such as data transmission, highly optimized physical sensors, and harnessing quantum states, but with cost, efficiency, and portability muc
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real