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An open resonator fabricated in a two-dimensional electron gas is used to explore the transition from strongly invasive scanning gate microscopy to the perturbative regime of weak tip-induced potentials. With the help of numerical simulations that faithfully reproduce the main experimental findings, we quantify the extent of the perturbative regime in which the tip-induced conductance change is unambiguously determined by properties of the unperturbed system. The correspondence between the experimental and numerical results is established by analyzing the characteristic length scale and the amplitude modulation of the conductance change. In the perturbative regime, the former is shown to assume a disorder-dependent maximum value, while the latter linearly increases with the strength of a weak tip potential.
We present conductance measurements of a ballistic circular stadium influenced by a scanning gate. When the tip depletes the electron gas below, we observe very pronounced and regular fringes covering the entire stadium. The fringes correspond to tra
We present a detailed experimental study on the electrostatic interaction between a quantum dot and the metallic tip of a scanning force microscope. Our method allowed us to quantitatively map the tip-induced potential and to determine the spatial de
We study the relationship between the local density of states (LDOS) and the conductance variation $Delta G$ in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans above the sample surface. We present an analytical mo
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that d
This paper presents an overview of scanning-gate microscopy applied to the imaging of electron transport through buried semiconductor nanostructures. After a brief description of the technique and of its possible artifacts, we give a summary of some