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Magnetic tunnel junctions comprising of an insulator sandwiched between two ferromagnetic films are the simplest spintronic devices. Theoretically, these can be modeled by a metallic Hamiltonian in both the lattice and the continuum with an addition of Zeeman field. We calculate conductance at arbitrary orientations of the easy axes of the two ferromagnets. When mapped, the lattice and the continuum models show a discrepancy in conductance in the limit of a large Zeeman field. We resolve the discrepancy by modeling the continuum theory in an appropriate way.
We calculate the conductance through double junctions of the type M(inf.)-Sn-Mm-Sn-M(inf.) and triple junctions of the type M(inf.)-Sn-Mm-Sn-Mm-Sn-M(inf.), where M(inf.) are semi-infinite metallic electrodes, Sn are n layers of semiconductor and Mm a
In this paper, a theoretical approach, comprising the non-equilibrium Greens function method for electronic transport and Landau-Khalatnikov equation for electric polarization dynamics, is presented to describe polarization-dependent tunneling electr
Experiments have shown that the tunneling current in a Co/Al$_2$O$_3$ magnetic tunneling junction (MTJ) is positively spin polarized, opposite to what is intuitively expected from standard tunneling theory which gives the spin polarization as exclusi
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs crucial for e
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferro