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We report the realization of a bonded-bridge on-chip superconducting coil and its use in impedance-matching a highly ohmic quantum dot (QD) to a $rm{3~GHz}$ measurement setup. The coil, modeled as a lumped-element $LC$ resonator, is more compact and has a wider bandwidth than resonators based on coplanar transmission lines (e.g. $lambda/4$ impedance transformers and stub tuners) at potentially better signal-to-noise ratios. In particular for measurements of radiation emitted by the device, such as shot noise, the 50$times$ larger bandwidth reduces the time to acquire the spectral density. The resonance frequency, close to 3.25 GHz, is three times higher than that of the one previously reported wire-bonded coil. As a proof of principle, we fabricated an $LC$ circuit that achieves impedance-matching to a $rm{sim 15~kOmega}$ load and validate it with a load defined by a carbon nanotube QD of which we measure the shot noise in the Coulomb blockade regime.
We present microwave frequency measurements of the dynamic admittance of a quantum dot tunnel coupled to a two-dimensional electron gas. The measurements are made via a high-quality 6.75 GHz on-chip resonator capacitively coupled to the dot. The reso
The demand for a fast high-frequency read-out of high impedance devices, such as quantum dots, necessitates impedance matching. Here we use a resonant impedance matching circuit (a stub tuner) realized by on-chip superconducting transmission lines to
Wave mixing is an archetypical phenomenon in bosonic systems. In optomechanics, the bi-directional conversion between electromagnetic waves or photons at optical frequencies and elastic waves or phonons at radio frequencies is building on precisely t
Electron spins in Si are an attractive platform for quantum computation, backed with their scalability and fast, high-fidelity quantum logic gates. Despite the importance of two-dimensional integration with efficient connectivity between qubits for m
The optical selection rules in epitaxial quantum dots are strongly influenced by the orientation of their natural quantization axis, which is usually parallel to the growth direction. This configuration is well suited for vertically emitting devices,