The electronic property of NiFe$_2$O$_4$ nanowire device is investigated through nonequilibrium Greens functions (NEGF) in combination with density functional theory (DFT). The electronic transport properties of NiFe$_2$O$_4$ nanowire are studied in terms of density of states, transmission spectrum and $I{-}V$ characteristics. The density of states gets modified with the applied bias voltage across NiFe$_2$O$_4$ nanowire device, the density of charge is observed both in the valence band and in the conduction band on increasing the bias voltage. The transmission spectrum of NiFe$_2$O$_4$ nanowire device gives the insights on the transition of electrons at different energy intervals. The findings of the present work suggest that NiFe$_2$O$_4$ nanowire device can be used as negative differential resistance (NDR) device and its NDR property can be tuned with the bias voltage, which may be used in microwave device, memory devices and in fast switching devices.
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