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The effect of electron-phonon interactions on optical absorption spectra requires a special treatment in materials with strong electron-hole interactions. We conceptualize these effects as exciton-phonon coupling. Through phonon absorption and emission, the optically accessible excitons are scattered into dark finite-momentum exciton states. We derive a practical expression for the exciton-phonon self-energy that relates to the temperature dependence of the optical transitions and their broadening. This expression differs qualitatively from previous approximated expressions found in literature.
We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV
Micro-photoluminescence spectroscopy at variable temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line (zero-phonon line, ZPL) exhibits a broad sideband due to exciton-a
The temperature-dependent optical response of excitons in semiconductors is controlled by the exciton-phonon interaction. When the exciton-lattice coupling is weak, the excitonic line has a Lorentzian profile resulting from motional narrowing, with a
Self-assembled hybrid perovskite quantum wells have attracted attention due to their tunable emission properties, ease of fabrication and device integration. However, the dynamics of excitons in these materials, especially how they couple to phonons
Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light emitters and absorbers. The surface properties of the