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We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscillations such that the canonical method (cf. Coleridge, Phys. Rev. B textbf{44}, 3793) for determination of quantum lifetime substantially underestimates $tau_q$ unless density inhomogeneity is explicitly considered; 2) $tau_q$ does not correlate well with quality as measured by $Delta_{5/2}$, the excitation gap of the fractional quantum Hall state at 5/2 filling.
We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $left < 1bar{1}0 right
Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain unchanged
Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a function of temp
The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an orde
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ u=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ u=1/