GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be found in the literature. They were deduced from studies on low Sn content GeSn layers (i.e. xSn<8%) or on GeSiSn layers. In this work, we have calibrated the GeSn Raman relationship for really high Sn content GeSn binaries (6<xSn<15%). We have used fully strained GeSn layers and fully relaxed GeSn under-etched microstructures to clearly differentiate the contributions of strain and chemical composition on the Ge-Ge Raman spectral shift. We have shown that the GeSn Raman-strain coefficient for high Sn contents is higher compared to that for pure Ge.
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