اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدValley Seebeck effect in gate tunable zigzag graphene nanoribbons
87
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
We propose, for the first time, a valley Seebeck effect in gate tunable zigzag graphene nanoribbons as a result of the interplay between thermal gradient and valleytronics. A pure valley current is further generated by the thermal gradient as well as the external bias. In a broad temperature range, the pure valley current is found to be linearly dependent on the temperature gradient while it increases with the increasing temperature of one lead for a fixed thermal gradient. A valley field effect transistor (FET) driven by the temperature gradient is proposed that can turn on and off the pure valley current by gate voltage. The threshold gate voltage and on valley current are proportional to the temperature gradient. When the system switches on at positive gate voltage, the pure valley current is nearly independent of gate voltage. The valley transconductance is up to 30 {mu}S if we take Ampere as the unit of the valley current. This valley FET may find potential application in future valleytronics and valley caloritronics.
قيم البحث
اقرأ أيضاً
Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of states, tho
ugh the two valley pseudospin states transform to each other under spatial inversion. The breaking of inversion symmetry induces various valley-contrasted physical properties; for instance, valley-dependent topological transport is of both scientific and technological interests. Bilayer graphene (BLG) is a unique system whose intrinsic inversion symmetry can be controllably broken by a perpendicular electric field, offering a rare possibility for continuously tunable valley-topological transport. Here, we used a perpendicular gate electric field to break the inversion symmetry in BLG, and a giant nonlocal response was observed as a result of the topological transport of the valley pseudospin. We further showed that the valley transport is fully tunable by external gates, and that the nonlocal signal persists up to room temperature and over long distances. These observations challenge contemporary understanding of topological transport in a gapped system, and the robust topological transport may lead to future valleytronic applications.
We demonstrate a flip-chip device for performing low-temperature acoustoelectric measurements on exfoliated two-dimensional materials. With this device, we study gate-tunable acoustoelectric transport in an exfoliated monolayer graphene device, measu
ring the voltage created as high-frequency surface acoustic waves dynamically drive the graphene charge carriers, the density of which we simultaneously control with a silicon back-gate. We demonstrate ambipolar dependence of the acoustoelectric signal, as expected from the sign of the graphene charge carriers. We observe a marked reduction in the magnitude of the acoustoelectric signal over a well-defined range of density in the vicinity of charge neutrality, which we attribute to a spatially heterogeneous charge-disorder landscape not directly revealed by conventional transport measurements.
Graphene nanoribbons with zigzag terminated edges have a magnetic ground state characterized by edge ferromagnetism and antiferromagnetic inter edge coupling. This broken symmetry state is degenerate in the spin orientation and we show that, associat
ed with this degeneracy, the system has topological solitons. The solitons appear at the interface between degenerate ground states. These solitons are the relevant charge excitations in the system. When charge is added to the nanoribbon, the system energetically prefers to create magnetic domains and accommodate the extra electrons in the interface solitons rather than setting them in the conduction band.
In this article, we report band structure studies of zigzag graphene nanoribbons (ZGNRs) on introducing defects (sp_3 hybridized carbon atoms) in different concentrations at edges by varying the ratio of sp_3 to sp_2 hybridized carbon atoms. On the b
asis of theoretical analyses, band gap values of ZGNRs are found to be strongly dependent on relative arrangement of sp3 to sp2 hybridized carbon atoms at the edges for a defect concentration; so the findings would greatly help in understanding band gap of nanoribbons for their electronic applications.
We present an analytical tight-binding theory of the optical properties of graphene nanoribbons with zigzag edges. Applying the transfer matrix technique to the nearest-neighbor tight-binding Hamiltonian, we derive analytical expressions for electron
wave functions and optical transition matrix elements for incident light polarized along the structure axis. It follows from the obtained results that optical selection rules result from the wave function parity factor $(-1)^J$, where $J$ is the band number. These selection rules are that $Delta J$ is odd for transitions between valence and conduction subbands and that $Delta J$ is even for transitions between only valence (conduction) subbands. Although these selection rules are different from those in armchair carbon nanotubes, there is a hidden correlation between absorption spectra of the two structures that should allow one to use them interchangeably in some applications. The correlation originates from the fact that van Hove singularities in the tubes are centered between those in the ribbons if the ribbon width is about a half of the tube circumference. The analysis of the matrix elements dependence on the electron wave vector for narrow ribbons shows a smooth non-singular behavior at the Dirac points and the points where the bulk states meet the edge states.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
