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Perovskites with fast oxygen ion conduction can enable technologies like solid oxide fuel cells. One component of fast oxygen ion conduction is low oxygen migration barrier. Here we apply ab initio methods on over 40 perovskites to produce a database of oxygen migration barriers ranging from 0.2 to 1.6 eV. Mining the database revealed that systems with low barriers also have low metal-oxygen bond strength, as measured by oxygen vacancy formation energy and oxygen p-band center energy. These correlations provide a powerful descriptor for the development of new oxygen ion conductors and may explain the poor stability of some of the best oxygen conducting perovskites under reducing conditions. Other commonly-cited measures of space, volume, or structure ideality showed only weak correlation with migration barrier. The lowest migration barriers (< 0.5 eV) belong to perovskites with non-transition-metal B-site cations, and may require vacancy-creation strategies that involve no dopants or low-association dopants for optimal performance.
Fast oxygen transport materials are necessary for a range of technologies, including efficient and cost-effective solid oxide fuel cells, gas separation membranes, oxygen sensors, chemical looping devices, and memristors. Strain is often proposed as
Oxygen vacancy formation energy is an important quantity for enabling fast oxygen diffusion and oxygen catalysis in technologies like solid oxide fuel cells. Both previous literature in various systems and our calculations in LaMnO3, La0.75Sr0.25MnO3
We report on the occurrence of exchange bias on laser-ablated granular thin films composed of Co nanoparticles embedded in amorphous zirconia matrix. The deposition method allows controlling the degree of oxidation of the Co particles by tuning the o
Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure.
Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investi