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In systems where electrons form both dispersive bands and small local spins, we show that changes of the spin configuration can tune the bands through a Lifshitz transition, resulting in a continuous metal-insulator transition associated with a progressive change of the Fermi surface topology. In contrast to a Mott-Hubbard and Slater pictures, this spin-driven Lifshitz transition appears in systems with small electron-electron correlation and large hybridization. We show that this situation is realized in 5$d$ distorted perovskites with an half-filled $t_{2g}$ bands such as NaOsO$_3$, where the strong $p-d$ hybridization reduces the local moment, and spin-orbit coupling causes a large renormalization of the electronic mobility. This weakens the role of electronic correlations and drives the system towards an itinerant magnetic regime which enables spin-fluctuations.
Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various l
We report on a Ni L$_{2,3}$ edges x-ray absorption spectroscopy (XAS) study in $R$NiO$_3$ perovskites. These compounds exhibit a metal to insulator ($MI$) transition as temperature decreases. The L$_{3}$ edge presents a clear splitting in the insulat
Metal-insulator transitions involve a mix of charge, spin, and structural degrees of freedom, and when strongly-correlated, can underlay the emergence of exotic quantum states. Mott insulators induced by the opening of a Coulomb gap are an important
The spin transition in LaCoO$_3$ has been investigated within the density-functional theory + dynamical mean-field theory formalism using continuous time quantum Monte Carlo. Calculations on the experimental rhombohedral atomic structure with two Co
The multi-orbital Hubbard model is known to host various ordered states such as antiferromagnetism, ferromagnetism and orbital-order. Here we propose an engineered system - an ultrathin SrVO$_3$ film - to realize all said orders upon carrier doping,