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Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies such as the quenched Hall effect appear near zero external magnetic field, thus hindering the sensitivity of the magnetometer to small magnetic fields. However, it is shown that the sensitivity of the diffusive limit can be almost completely restored at low temperatures using a large current density in the Hall bar of about 10 A/m. Overcoming the size limitation of conventional etched Hall bars with electrostatic gating enables the measurement of magnetization curves of 440 nm wide micro-magnets with a signal-to-noise ratio above 10^3. Furthermore, the inhomogeneity of the stray magnetic field created by the micro-magnets is directly measured using the gate-voltage-dependent width of the sensitive area of the Hall bar.
In this work we use electrostatic control of quantum Hall ferromagnetic transitions in CdMnTe quantum wells to study electron transport through individual domain walls (DWs) induced at a specific location. These DWs are formed due to hybridization of
We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstra
We report here the results of two-dimensional electron gas based micro-Hall magnetometry measurements and micromagnetic simulations of dipolar coupled nanomagnets of Ni80Fe20 arranged in a double ring-like geometry. We observe that although magnetic
Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/A
We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic fiel