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The ground-state electronic configuration of three coupled bidimensional electron gases has been determined using a variational Hartree-Fock approach, at zero magnetic field. The layers are Coulomb coupled, and tunneling is present between neighboring layers. In the limit of small separation between layers, the tunneling becomes the dominant energy contribution, while for large distance between layers the physics is driven by the Hartree electrostatic energy. Transition from tunneling to hartree dominated physics is shifted towards larger layer separation values as the total bidimensional density of the trilayers decreases. The inter-layer exchange helps in stabilize a balanced configuration, where the three layers are approximately equally occupied; most of the experiments are performed in the vicinity of this balanced configuration. Several ground-state configurations are consequence of a delicate interplay between tunneling and inter-subband exchange.
We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures, in which electrons and holes accumulate in the InAs and GaSb regions respectively, under a magnetic field parallel to the interfaces. The low-temperature (T = 4.2K
The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the 2DEGs planes. It is well known that the quantizing m
Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due t
We calculate the plasmon dispersion relation for Coulomb coupled metallic armchair graphene nanoribbons and doped monolayer graphene. The crossing of the plasmon curves, which occurs for uncoupled 1D and 2D systems, is split by the interlayer Coulomb
The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Here we d