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تسجيل مستخدم جديدThe first demonstration of the concept of narrow-FOV Si/CdTe semiconductor Compton camera
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The Soft Gamma-ray Detector (SGD), to be deployed onboard the {it ASTRO-H} satellite, has been developed to provide the highest sensitivity observations of celestial sources in the energy band of 60-600~keV by employing a detector concept which uses a Compton camera whose field-of-view is restricted by a BGO shield to a few degree (narrow-FOV Compton camera). In this concept, the background from outside the FOV can be heavily suppressed by constraining the incident direction of the gamma ray reconstructed by the Compton camera to be consistent with the narrow FOV. We, for the first time, demonstrate the validity of the concept using background data taken during the thermal vacuum test and the low-temperature environment test of the flight model of SGD on ground. We show that the measured background level is suppressed to less than 10% by combining the event rejection using the anti-coincidence trigger of the active BGO shield and by using Compton event reconstruction techniques. More than 75% of the signals from the field-of-view are retained against the background rejection, which clearly demonstrates the improvement of signal-to-noise ratio. The estimated effective area of 22.8~cm$^2$ meets the mission requirement even though not all of the operational parameters of the instrument have been fully optimized yet.
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The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60--600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combini
ng a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm x 12 cm x 12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0--2.0 keV (FWHM) at 60 keV and 1.6--2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, respectively, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype.
Gamma-ray polarization offers a unique probes into the geometry of the gamma-ray emission process in celestial objects. The Soft Gamma-ray Detector (SGD) onboard the X-ray observatory Hitomi is a Si/CdTe Compton camera and is expected to be an excell
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We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semicondu
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A Compton camera is the most promising approach for gamma-ray detection in the energy region from several hundred keV to MeV, especially for application in high energy astrophysics. In order to obtain good angular resolution, semiconductor detectors
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