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Crystallographic and magnetic properties of Fe5PB2, Fe4CoPB2, Fe4MnPB2, Fe5SiB2, Fe4CoSiB2, and Fe4MnSiB2 are reported. All adopt the tetragonal Cr5B3 structure-type and are ferromagnetic at room temperature with easy axis of magnetization along the c-axis. The spin reorientation in Fe5SiB2 is observed as an anomaly in the magnetization near 170 K, and is suppressed by substitution of Co or Mn for Fe. The silicides are found to generally have larger magnetic moments than the phosphides, but the data suggests smaller magnetic anisotropy in the silicides. Cobalt substitution reduces the Curie temperatures by more than 100 K and ordered magnetic moments by 16-20%, while manganese substitution has a much smaller effect. This suggests Mn moments align ferromagnetically with the Fe and that Co does not have an ordered moment in these structures. Anisotropic thermal expansion is observed in Fe5PB2 and Fe5SiB2, with negative thermal expansion seen along the c-axis of Fe5SiB2. First principles calculations of the magnetic properties of Fe5SiB2 and Fe4MnSiB2 are reported. The results, including the magnetic moment and anisotropy, and are in good agreement with experiment.
We studied the structural and magnetic properties of FeC~thin films deposited by co-sputtering of Fe and C targets in a direct current magnetron sputtering (dcMS) process at a substrate temperature (Ts) of 300, 523 and 773,K. The structure and morpho
We report the deposition of thin Co$_2$FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L2$_1$ ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on Al$_2$O$_3$(110) show several epitaxial domai
New double perovskites LaPbMSbO6, where M2+ = Mn2+, Co2+, and Ni2+, were synthesized as polycrystals by an aqueous synthetic route at temperatures below 1000 oC. All samples are monoclinic, space group P21/n, as obtained from Rietveld analysis of X-r
We investigated structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga compounds. The crystallinity of the Mn-Fe-Ga thin films was confirmed using x-ray diffraction. X-ray reflection and atomic force microscopy measurements were
We report on the metalorganic chemical vapor deposition (MOCVD) of GaN:Fe and (Ga,Fe)N layers on c-sapphire substrates and their thorough characterization via high-resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), spatiall