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تسجيل مستخدم جديدStrain accommodation through facet matching in La$_text{1.85}$Sr$_text{0.15}$CuO$_text{4}$/Nd$_text{1.85}$Ce$_text{0.15}$CuO$_text{4}$ ramp-edge junctions
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Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd$_text{1.85}$Ce$_text{0.15}$CuO$_text{4}$ and superconducting hole-doped La$_text{1.85}$Sr$_text{0.15}$CuO$_text{4}$ thin films, the latter being the top layer. On the ramp, a new growth mode of La$_text{1.85}$Sr$_text{0.15}$CuO$_text{4}$ with a 3.3 degree tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.
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